DRY ETCHING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SILICON RING

DRY ETCHING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SILICON RING

PROBLEM TO BE SOLVED: To provide a dry etching apparatus for doubling component life of a ring for expanding plasma arranged within a processing chamber, and also to provide a method of manufacturing a semiconductor device and an Si ring. SOLUTION: A peripheral region 15A of a cathode electrode 12 i...

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1. Verfasser: MAGARA SHINJI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MAGARA SHINJI
description PROBLEM TO BE SOLVED: To provide a dry etching apparatus for doubling component life of a ring for expanding plasma arranged within a processing chamber, and also to provide a method of manufacturing a semiconductor device and an Si ring. SOLUTION: A peripheral region 15A of a cathode electrode 12 is formed of an Al ring 15 as a foundation board. The Si ring 16 is provided on this peripheral region 15A. The Si ring 16 has a shape in which both front and rear surfaces are used as the main surface. The Si ring 16 is preferably in almost the symmetrical shape in both front and rear surfaces. The Si ring 16 is worn and deteriorated when the plasma discharge time is accumulated with the etching process. The Si ring 16 must be replaced before adverse effect appears in the etching rate. At the replacing period including the maintenance period and cleaning period, the Si ring 16 may be re-used after turning over thereof. COPYRIGHT: (C)2005,JPO&NCIPI
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SOLUTION: A peripheral region 15A of a cathode electrode 12 is formed of an Al ring 15 as a foundation board. The Si ring 16 is provided on this peripheral region 15A. The Si ring 16 has a shape in which both front and rear surfaces are used as the main surface. The Si ring 16 is preferably in almost the symmetrical shape in both front and rear surfaces. The Si ring 16 is worn and deteriorated when the plasma discharge time is accumulated with the etching process. The Si ring 16 must be replaced before adverse effect appears in the etching rate. At the replacing period including the maintenance period and cleaning period, the Si ring 16 may be re-used after turning over thereof. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title DRY ETCHING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SILICON RING
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