ELECTROPLATED INTERCONNECTION STRUCTURE ON INTEGRATED CIRCUIT CHIP
PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit. SOLUTION: By electroplating Cu in a bath which includes an additive and is usually used for adhering Cu metal which is flat and glossy and has high ductility and low stress, se...
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| creator | HU CHAO-KUN HURD JEFFREY LOUIS ANDRICACOS PANAYOTIS CONSTANTINOU DELIGIANNI HARIKLIA RODBELL KENNETH PARKER DUKOVIC JOHN OWEN HORKANS WILMA J WONG KWONG-HON EDELSTEIN DANIEL CHARLES UZOH CYPRIAN EMEKA |
| description | PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit. SOLUTION: By electroplating Cu in a bath which includes an additive and is usually used for adhering Cu metal which is flat and glossy and has high ductility and low stress, seamless semiconductor without void is obtained. This method allows a feature to be super-filled up without leaving void or seam. The resistance of electromigration with the structure utilizing Cu which is electroplated by this method is more excellent than the resistance of electromigration with the structure manufactured using Cu which is adhered by methods other than AlCu structure or electroplating. COPYRIGHT: (C)2005,JPO&NCIPI |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2005136433A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2005136433A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2005136433A3</originalsourceid><addsrcrecordid>eNrjZHBy9XF1DgnyD_BxDHF1UfD0C3ENcvb38wMKevr7KQSHBIU6h4QGuSoAOSBJ9yCwOmfPIOdQzxAFZw_PAB4G1rTEnOJUXijNzaDk5hri7KGbWpAfn1pckJicmpdaEu8VYGRgYGpobGZibOxoTJQiAJlVLBk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ELECTROPLATED INTERCONNECTION STRUCTURE ON INTEGRATED CIRCUIT CHIP</title><source>esp@cenet</source><creator>HU CHAO-KUN ; HURD JEFFREY LOUIS ; ANDRICACOS PANAYOTIS CONSTANTINOU ; DELIGIANNI HARIKLIA ; RODBELL KENNETH PARKER ; DUKOVIC JOHN OWEN ; HORKANS WILMA J ; WONG KWONG-HON ; EDELSTEIN DANIEL CHARLES ; UZOH CYPRIAN EMEKA</creator><creatorcontrib>HU CHAO-KUN ; HURD JEFFREY LOUIS ; ANDRICACOS PANAYOTIS CONSTANTINOU ; DELIGIANNI HARIKLIA ; RODBELL KENNETH PARKER ; DUKOVIC JOHN OWEN ; HORKANS WILMA J ; WONG KWONG-HON ; EDELSTEIN DANIEL CHARLES ; UZOH CYPRIAN EMEKA</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit. SOLUTION: By electroplating Cu in a bath which includes an additive and is usually used for adhering Cu metal which is flat and glossy and has high ductility and low stress, seamless semiconductor without void is obtained. This method allows a feature to be super-filled up without leaving void or seam. The resistance of electromigration with the structure utilizing Cu which is electroplated by this method is more excellent than the resistance of electromigration with the structure manufactured using Cu which is adhered by methods other than AlCu structure or electroplating. COPYRIGHT: (C)2005,JPO&NCIPI</description><edition>7</edition><language>eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050526&DB=EPODOC&CC=JP&NR=2005136433A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050526&DB=EPODOC&CC=JP&NR=2005136433A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HU CHAO-KUN</creatorcontrib><creatorcontrib>HURD JEFFREY LOUIS</creatorcontrib><creatorcontrib>ANDRICACOS PANAYOTIS CONSTANTINOU</creatorcontrib><creatorcontrib>DELIGIANNI HARIKLIA</creatorcontrib><creatorcontrib>RODBELL KENNETH PARKER</creatorcontrib><creatorcontrib>DUKOVIC JOHN OWEN</creatorcontrib><creatorcontrib>HORKANS WILMA J</creatorcontrib><creatorcontrib>WONG KWONG-HON</creatorcontrib><creatorcontrib>EDELSTEIN DANIEL CHARLES</creatorcontrib><creatorcontrib>UZOH CYPRIAN EMEKA</creatorcontrib><title>ELECTROPLATED INTERCONNECTION STRUCTURE ON INTEGRATED CIRCUIT CHIP</title><description>PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit. SOLUTION: By electroplating Cu in a bath which includes an additive and is usually used for adhering Cu metal which is flat and glossy and has high ductility and low stress, seamless semiconductor without void is obtained. This method allows a feature to be super-filled up without leaving void or seam. The resistance of electromigration with the structure utilizing Cu which is electroplated by this method is more excellent than the resistance of electromigration with the structure manufactured using Cu which is adhered by methods other than AlCu structure or electroplating. COPYRIGHT: (C)2005,JPO&NCIPI</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBy9XF1DgnyD_BxDHF1UfD0C3ENcvb38wMKevr7KQSHBIU6h4QGuSoAOSBJ9yCwOmfPIOdQzxAFZw_PAB4G1rTEnOJUXijNzaDk5hri7KGbWpAfn1pckJicmpdaEu8VYGRgYGpobGZibOxoTJQiAJlVLBk</recordid><startdate>20050526</startdate><enddate>20050526</enddate><creator>HU CHAO-KUN</creator><creator>HURD JEFFREY LOUIS</creator><creator>ANDRICACOS PANAYOTIS CONSTANTINOU</creator><creator>DELIGIANNI HARIKLIA</creator><creator>RODBELL KENNETH PARKER</creator><creator>DUKOVIC JOHN OWEN</creator><creator>HORKANS WILMA J</creator><creator>WONG KWONG-HON</creator><creator>EDELSTEIN DANIEL CHARLES</creator><creator>UZOH CYPRIAN EMEKA</creator><scope>EVB</scope></search><sort><creationdate>20050526</creationdate><title>ELECTROPLATED INTERCONNECTION STRUCTURE ON INTEGRATED CIRCUIT CHIP</title><author>HU CHAO-KUN ; HURD JEFFREY LOUIS ; ANDRICACOS PANAYOTIS CONSTANTINOU ; DELIGIANNI HARIKLIA ; RODBELL KENNETH PARKER ; DUKOVIC JOHN OWEN ; HORKANS WILMA J ; WONG KWONG-HON ; EDELSTEIN DANIEL CHARLES ; UZOH CYPRIAN EMEKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2005136433A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HU CHAO-KUN</creatorcontrib><creatorcontrib>HURD JEFFREY LOUIS</creatorcontrib><creatorcontrib>ANDRICACOS PANAYOTIS CONSTANTINOU</creatorcontrib><creatorcontrib>DELIGIANNI HARIKLIA</creatorcontrib><creatorcontrib>RODBELL KENNETH PARKER</creatorcontrib><creatorcontrib>DUKOVIC JOHN OWEN</creatorcontrib><creatorcontrib>HORKANS WILMA J</creatorcontrib><creatorcontrib>WONG KWONG-HON</creatorcontrib><creatorcontrib>EDELSTEIN DANIEL CHARLES</creatorcontrib><creatorcontrib>UZOH CYPRIAN EMEKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HU CHAO-KUN</au><au>HURD JEFFREY LOUIS</au><au>ANDRICACOS PANAYOTIS CONSTANTINOU</au><au>DELIGIANNI HARIKLIA</au><au>RODBELL KENNETH PARKER</au><au>DUKOVIC JOHN OWEN</au><au>HORKANS WILMA J</au><au>WONG KWONG-HON</au><au>EDELSTEIN DANIEL CHARLES</au><au>UZOH CYPRIAN EMEKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTROPLATED INTERCONNECTION STRUCTURE ON INTEGRATED CIRCUIT CHIP</title><date>2005-05-26</date><risdate>2005</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit. SOLUTION: By electroplating Cu in a bath which includes an additive and is usually used for adhering Cu metal which is flat and glossy and has high ductility and low stress, seamless semiconductor without void is obtained. This method allows a feature to be super-filled up without leaving void or seam. The resistance of electromigration with the structure utilizing Cu which is electroplated by this method is more excellent than the resistance of electromigration with the structure manufactured using Cu which is adhered by methods other than AlCu structure or electroplating. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
| title | ELECTROPLATED INTERCONNECTION STRUCTURE ON INTEGRATED CIRCUIT CHIP |
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