ELECTROPLATED INTERCONNECTION STRUCTURE ON INTEGRATED CIRCUIT CHIP

ELECTROPLATED INTERCONNECTION STRUCTURE ON INTEGRATED CIRCUIT CHIP

PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit. SOLUTION: By electroplating Cu in a bath which includes an additive and is usually used for adhering Cu metal which is flat and glossy and has high ductility and low stress, se...

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Hauptverfasser: HU CHAO-KUN, HURD JEFFREY LOUIS, ANDRICACOS PANAYOTIS CONSTANTINOU, DELIGIANNI HARIKLIA, RODBELL KENNETH PARKER, DUKOVIC JOHN OWEN, HORKANS WILMA J, WONG KWONG-HON, EDELSTEIN DANIEL CHARLES, UZOH CYPRIAN EMEKA
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit. SOLUTION: By electroplating Cu in a bath which includes an additive and is usually used for adhering Cu metal which is flat and glossy and has high ductility and low stress, seamless semiconductor without void is obtained. This method allows a feature to be super-filled up without leaving void or seam. The resistance of electromigration with the structure utilizing Cu which is electroplated by this method is more excellent than the resistance of electromigration with the structure manufactured using Cu which is adhered by methods other than AlCu structure or electroplating. COPYRIGHT: (C)2005,JPO&NCIPI