TRANSFER MASK FOR CHARGED PARTICLE BEAM AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a stencil mask which is used for the EPL system and LEEPL system using the electron beam as the light source to reduce influence on the quality to the pattern, accurately detect the location accuracy of pattern to be transferred within the transfer region and is give...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KUROSAWA HIDE, HOGEN MORIHISA, SANO NAOTAKE, FUJITA HIROSHI
Format: Patent
Sprache:eng
Schlagworte:
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