RADIATION STRUCTURE OF POWER MODULE
PROBLEM TO BE SOLVED: To provide a radiation structure of a power module with which radiation efficiency of heat that a power element emits can be raised. SOLUTION: Heat that MOSFET 11 emits is transmitted to a metal film 22 at a rear side by via holes 20 which are pierced from a surface to the rear...
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creator | ITO TOSHIMI IMAI FUKAMI |
description | PROBLEM TO BE SOLVED: To provide a radiation structure of a power module with which radiation efficiency of heat that a power element emits can be raised. SOLUTION: Heat that MOSFET 11 emits is transmitted to a metal film 22 at a rear side by via holes 20 which are pierced from a surface to the rear face of a substrate 10 through a lead 14 and a pad P3. Consequently, heat transmitted to the metal film 22 is radiated at the metal film 22. Heat that MOSFET 11 emits is also radiated in the pad P3. Thus, heat is radiated in a wide area and therefore radiation efficiency is improved. COPYRIGHT: (C)2005,JPO&NCIPI |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2005072104A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2005072104A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2005072104A3</originalsourceid><addsrcrecordid>eNrjZFAOcnTxdAzx9PdTCA4JCnUOCQ1yVfB3UwjwD3cNUvD1dwn1ceVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBqYG5kaGBiaOxkQpAgCu9SM8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>RADIATION STRUCTURE OF POWER MODULE</title><source>esp@cenet</source><creator>ITO TOSHIMI ; IMAI FUKAMI</creator><creatorcontrib>ITO TOSHIMI ; IMAI FUKAMI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a radiation structure of a power module with which radiation efficiency of heat that a power element emits can be raised. SOLUTION: Heat that MOSFET 11 emits is transmitted to a metal film 22 at a rear side by via holes 20 which are pierced from a surface to the rear face of a substrate 10 through a lead 14 and a pad P3. Consequently, heat transmitted to the metal film 22 is radiated at the metal film 22. Heat that MOSFET 11 emits is also radiated in the pad P3. Thus, heat is radiated in a wide area and therefore radiation efficiency is improved. COPYRIGHT: (C)2005,JPO&NCIPI</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050317&DB=EPODOC&CC=JP&NR=2005072104A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050317&DB=EPODOC&CC=JP&NR=2005072104A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITO TOSHIMI</creatorcontrib><creatorcontrib>IMAI FUKAMI</creatorcontrib><title>RADIATION STRUCTURE OF POWER MODULE</title><description>PROBLEM TO BE SOLVED: To provide a radiation structure of a power module with which radiation efficiency of heat that a power element emits can be raised. SOLUTION: Heat that MOSFET 11 emits is transmitted to a metal film 22 at a rear side by via holes 20 which are pierced from a surface to the rear face of a substrate 10 through a lead 14 and a pad P3. Consequently, heat transmitted to the metal film 22 is radiated at the metal film 22. Heat that MOSFET 11 emits is also radiated in the pad P3. Thus, heat is radiated in a wide area and therefore radiation efficiency is improved. COPYRIGHT: (C)2005,JPO&NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAOcnTxdAzx9PdTCA4JCnUOCQ1yVfB3UwjwD3cNUvD1dwn1ceVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBqYG5kaGBiaOxkQpAgCu9SM8</recordid><startdate>20050317</startdate><enddate>20050317</enddate><creator>ITO TOSHIMI</creator><creator>IMAI FUKAMI</creator><scope>EVB</scope></search><sort><creationdate>20050317</creationdate><title>RADIATION STRUCTURE OF POWER MODULE</title><author>ITO TOSHIMI ; IMAI FUKAMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2005072104A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ITO TOSHIMI</creatorcontrib><creatorcontrib>IMAI FUKAMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ITO TOSHIMI</au><au>IMAI FUKAMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RADIATION STRUCTURE OF POWER MODULE</title><date>2005-03-17</date><risdate>2005</risdate><abstract>PROBLEM TO BE SOLVED: To provide a radiation structure of a power module with which radiation efficiency of heat that a power element emits can be raised. SOLUTION: Heat that MOSFET 11 emits is transmitted to a metal film 22 at a rear side by via holes 20 which are pierced from a surface to the rear face of a substrate 10 through a lead 14 and a pad P3. Consequently, heat transmitted to the metal film 22 is radiated at the metal film 22. Heat that MOSFET 11 emits is also radiated in the pad P3. Thus, heat is radiated in a wide area and therefore radiation efficiency is improved. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | RADIATION STRUCTURE OF POWER MODULE |
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