HEAT TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a heat treatment method which can obtain a metal film having a few micro-voids and a coarse crystal particle and a method for manufacturing a semiconductor device to obtain the semiconductor device which is hard to cause a wiring failure. SOLUTION: On a wafer W, an i...

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Bibliographische Detailangaben
1. Verfasser: HASUNUMA MASAHIKO
Format: Patent
Sprache:eng
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