METHOD FOR FORMING THIN FILM
PROBLEM TO BE SOLVED: To provide a method for forming a thin film for lowering concentration of impurity caused by a ligand by using a simple device. SOLUTION: The method for forming the thin film removes an excessive metal complex by purging the surface of a substrate with an inert gas after adsorb...
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| creator | TORII KAZUNARI KAWAHARA TAKAAKI KOBAYASHI NOBUYOSHI |
| description | PROBLEM TO BE SOLVED: To provide a method for forming a thin film for lowering concentration of impurity caused by a ligand by using a simple device. SOLUTION: The method for forming the thin film removes an excessive metal complex by purging the surface of a substrate with an inert gas after adsorbing the metal complex by intermittently supplying the metal complex on the surface of the substrate, next, intermittently supplies hydrogen gas on the surface of the substrate, removes excessive hydrogen gas by purging the surface of the substrate with the inert gas after removing the ligand of the adsorbed metal complex, thereafter, intermittently supplies oxidation gas on the surface of the substrate, and removes excessive oxidation gas by purging the surface of the substrate with the inert gas after changing the terminal group of the adsorbed metal complex into a hydroxyl group. The method forms the thin film having a prescribed film thickness by repeating the above process. COPYRIGHT: (C)2005,JPO&NCIPI |
| format | Patent |
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SOLUTION: The method for forming the thin film removes an excessive metal complex by purging the surface of a substrate with an inert gas after adsorbing the metal complex by intermittently supplying the metal complex on the surface of the substrate, next, intermittently supplies hydrogen gas on the surface of the substrate, removes excessive hydrogen gas by purging the surface of the substrate with the inert gas after removing the ligand of the adsorbed metal complex, thereafter, intermittently supplies oxidation gas on the surface of the substrate, and removes excessive oxidation gas by purging the surface of the substrate with the inert gas after changing the terminal group of the adsorbed metal complex into a hydroxyl group. The method forms the thin film having a prescribed film thickness by repeating the above process. 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SOLUTION: The method for forming the thin film removes an excessive metal complex by purging the surface of a substrate with an inert gas after adsorbing the metal complex by intermittently supplying the metal complex on the surface of the substrate, next, intermittently supplies hydrogen gas on the surface of the substrate, removes excessive hydrogen gas by purging the surface of the substrate with the inert gas after removing the ligand of the adsorbed metal complex, thereafter, intermittently supplies oxidation gas on the surface of the substrate, and removes excessive oxidation gas by purging the surface of the substrate with the inert gas after changing the terminal group of the adsorbed metal complex into a hydroxyl group. The method forms the thin film having a prescribed film thickness by repeating the above process. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD FOR FORMING THIN FILM |
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