PHOTORESIST REMOVER AND VAMP FORMING METHOD FOR SEMICONDUCTOR DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To provide a photoresist remover and a vamp forming method for a semiconductor device using the same in which a photoresist can be effectively removed by a simple process. SOLUTION: A protecting film pattern is formed with an opening for partially exposing an upper part of a me...

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Bibliographische Detailangaben
Hauptverfasser: TO JINKAI, BOKU TOCHIN, JUN PIL-KWON, CHON SANG-MOON
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a photoresist remover and a vamp forming method for a semiconductor device using the same in which a photoresist can be effectively removed by a simple process. SOLUTION: A protecting film pattern is formed with an opening for partially exposing an upper part of a metal wiring pattern on a substrate with the metal wiring pattern formed thereon. The photoresist having a vamp opening is patterned on the protecting film pattern and a metal is grown in the vamp opening to form the vamp. The photo-resist pattern is then removed by the photoresist remover containing, as main components, monoethanolamine and dimethylacetamide. Thus, the photoresist pattern can be efficiently and perfectly removed. COPYRIGHT: (C)2005,JPO&NCIPI