SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To reduce a contact resistance between a tungsten plug and a second metal interconnection in via-holes formed in a multilayer interconnection of a semiconductor device. SOLUTION: A first metal interconnection 13 is formed on a semiconductor substrate, and then an interlayer ins...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	ISHITANI HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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