FLASH MEMORY IN WHICH PROGRAM DISTURBANCE BY PARTIAL PROGRAM IS PREVENTED

FLASH MEMORY IN WHICH PROGRAM DISTURBANCE BY PARTIAL PROGRAM IS PREVENTED

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which occurrence of program disturbance caused by a partial program is prevented. SOLUTION: The device includes an array of memory cells which are arranged in rows and columns. The columns are separated into at least two c...

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INFORMATION STORAGE
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STATIC STORES
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description PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which occurrence of program disturbance caused by a partial program is prevented. SOLUTION: The device includes an array of memory cells which are arranged in rows and columns. The columns are separated into at least two column regions. Each row is separated into two word lines that are electrically insulated from each other and to be respectively arranged into each column region. The memory device additionally includes a circuit which discriminates to determine the propriety of data, that are loaded into a register during a program operation, belong to either one of the column regions and a circuit which drives one or all of the word lines of the row selected as a discrimination result into a program voltage by selecting one of the rows in response of row adress information. COPYRIGHT: (C)2005,JPO&NCIPI
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title FLASH MEMORY IN WHICH PROGRAM DISTURBANCE BY PARTIAL PROGRAM IS PREVENTED
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