WAFER ADAPTABLE TO TERAHERTZ ELECTROMAGNETIC WAVE, DEVICE FOR DETECTING TERAHERTZ GENERATION, AND METHOD OF MANUFACTURING THEM
PROBLEM TO BE SOLVED: To provide a wafer adaptable to a terahertz electromagnetic wave having shorter-lived carriers, a device for detecting terahertz generation, and a method of manufacturing them. SOLUTION: In the wafer adaptable to a terahertz electromagnetic wave 11, a number of As clusters 26 a...
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| creator | ARAGAKI MINORU EDAMURA TADATAKA |
| description | PROBLEM TO BE SOLVED: To provide a wafer adaptable to a terahertz electromagnetic wave having shorter-lived carriers, a device for detecting terahertz generation, and a method of manufacturing them. SOLUTION: In the wafer adaptable to a terahertz electromagnetic wave 11, a number of As clusters 26 are precipitated in the vicinity of a surface 11a. The As cluster 26 is known to function as a trapping center, and it is in particular known that As clusters 26 in the vicinity of the surface 11a largely contribute to carrier trapping. An epitaxial layer 16 contains oxygen, by which deep levels are formed. Since As clusters 26 in the vicinity of the surface 11a of the epitaxial layer 16 are significantly increased, and oxygen is contained in the epitaxial layer 16, the wafer adaptable to a terahertz electromagnetic wave 11 can realize shorter-lived carriers. COPYRIGHT: (C)2005,JPO&NCIPI |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2004317434A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2004317434A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2004317434A3</originalsourceid><addsrcrecordid>eNqNi7EKwjAUALs4iPoPD-cK1Racn8lLE2kSCa8tuJQicRIt1Nlvt4iDo9PdcDdPXi0qCoAST4yHioA9MAXUFPgMVJHg4C2WjtgIaLGhFCQ1RhAoHyblqTCu_JlKcpOz8S4FdBIssfYSvAKLrlYouA6fQ5NdJrNrfxvj6stFslbEQm_i8OjiOPSXeI_P7njaZVmRb_dFXmD-V_QGUlo73w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>WAFER ADAPTABLE TO TERAHERTZ ELECTROMAGNETIC WAVE, DEVICE FOR DETECTING TERAHERTZ GENERATION, AND METHOD OF MANUFACTURING THEM</title><source>esp@cenet</source><creator>ARAGAKI MINORU ; EDAMURA TADATAKA</creator><creatorcontrib>ARAGAKI MINORU ; EDAMURA TADATAKA</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a wafer adaptable to a terahertz electromagnetic wave having shorter-lived carriers, a device for detecting terahertz generation, and a method of manufacturing them. SOLUTION: In the wafer adaptable to a terahertz electromagnetic wave 11, a number of As clusters 26 are precipitated in the vicinity of a surface 11a. The As cluster 26 is known to function as a trapping center, and it is in particular known that As clusters 26 in the vicinity of the surface 11a largely contribute to carrier trapping. An epitaxial layer 16 contains oxygen, by which deep levels are formed. Since As clusters 26 in the vicinity of the surface 11a of the epitaxial layer 16 are significantly increased, and oxygen is contained in the epitaxial layer 16, the wafer adaptable to a terahertz electromagnetic wave 11 can realize shorter-lived carriers. COPYRIGHT: (C)2005,JPO&NCIPI</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041111&DB=EPODOC&CC=JP&NR=2004317434A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041111&DB=EPODOC&CC=JP&NR=2004317434A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ARAGAKI MINORU</creatorcontrib><creatorcontrib>EDAMURA TADATAKA</creatorcontrib><title>WAFER ADAPTABLE TO TERAHERTZ ELECTROMAGNETIC WAVE, DEVICE FOR DETECTING TERAHERTZ GENERATION, AND METHOD OF MANUFACTURING THEM</title><description>PROBLEM TO BE SOLVED: To provide a wafer adaptable to a terahertz electromagnetic wave having shorter-lived carriers, a device for detecting terahertz generation, and a method of manufacturing them. SOLUTION: In the wafer adaptable to a terahertz electromagnetic wave 11, a number of As clusters 26 are precipitated in the vicinity of a surface 11a. The As cluster 26 is known to function as a trapping center, and it is in particular known that As clusters 26 in the vicinity of the surface 11a largely contribute to carrier trapping. An epitaxial layer 16 contains oxygen, by which deep levels are formed. Since As clusters 26 in the vicinity of the surface 11a of the epitaxial layer 16 are significantly increased, and oxygen is contained in the epitaxial layer 16, the wafer adaptable to a terahertz electromagnetic wave 11 can realize shorter-lived carriers. COPYRIGHT: (C)2005,JPO&NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKwjAUALs4iPoPD-cK1Racn8lLE2kSCa8tuJQicRIt1Nlvt4iDo9PdcDdPXi0qCoAST4yHioA9MAXUFPgMVJHg4C2WjtgIaLGhFCQ1RhAoHyblqTCu_JlKcpOz8S4FdBIssfYSvAKLrlYouA6fQ5NdJrNrfxvj6stFslbEQm_i8OjiOPSXeI_P7njaZVmRb_dFXmD-V_QGUlo73w</recordid><startdate>20041111</startdate><enddate>20041111</enddate><creator>ARAGAKI MINORU</creator><creator>EDAMURA TADATAKA</creator><scope>EVB</scope></search><sort><creationdate>20041111</creationdate><title>WAFER ADAPTABLE TO TERAHERTZ ELECTROMAGNETIC WAVE, DEVICE FOR DETECTING TERAHERTZ GENERATION, AND METHOD OF MANUFACTURING THEM</title><author>ARAGAKI MINORU ; EDAMURA TADATAKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2004317434A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>ARAGAKI MINORU</creatorcontrib><creatorcontrib>EDAMURA TADATAKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ARAGAKI MINORU</au><au>EDAMURA TADATAKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>WAFER ADAPTABLE TO TERAHERTZ ELECTROMAGNETIC WAVE, DEVICE FOR DETECTING TERAHERTZ GENERATION, AND METHOD OF MANUFACTURING THEM</title><date>2004-11-11</date><risdate>2004</risdate><abstract>PROBLEM TO BE SOLVED: To provide a wafer adaptable to a terahertz electromagnetic wave having shorter-lived carriers, a device for detecting terahertz generation, and a method of manufacturing them. SOLUTION: In the wafer adaptable to a terahertz electromagnetic wave 11, a number of As clusters 26 are precipitated in the vicinity of a surface 11a. The As cluster 26 is known to function as a trapping center, and it is in particular known that As clusters 26 in the vicinity of the surface 11a largely contribute to carrier trapping. An epitaxial layer 16 contains oxygen, by which deep levels are formed. Since As clusters 26 in the vicinity of the surface 11a of the epitaxial layer 16 are significantly increased, and oxygen is contained in the epitaxial layer 16, the wafer adaptable to a terahertz electromagnetic wave 11 can realize shorter-lived carriers. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | WAFER ADAPTABLE TO TERAHERTZ ELECTROMAGNETIC WAVE, DEVICE FOR DETECTING TERAHERTZ GENERATION, AND METHOD OF MANUFACTURING THEM |
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