PHOTOELECTRIC CONVERTER AND ITS FABRICATING PROCESS

PHOTOELECTRIC CONVERTER AND ITS FABRICATING PROCESS

PROBLEM TO BE SOLVED: To provide a photoelectric converter which is fabricated inexpensively by a convenient and simple process, and in which photoelectric conversion efficiency is enhanced while reducing surface recombination on the periphery of an electrode by ensuring the cross-sectional area of...

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Hauptverfasser: NUNOI TORU, KOMATSU YUJI
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator NUNOI TORU
KOMATSU YUJI
description PROBLEM TO BE SOLVED: To provide a photoelectric converter which is fabricated inexpensively by a convenient and simple process, and in which photoelectric conversion efficiency is enhanced while reducing surface recombination on the periphery of an electrode by ensuring the cross-sectional area of the electrode while reducing the occupation area thereof by reducing the width of the electrode depending on the structure and fabrication process of the electrode, and also to provide its fabricating process. SOLUTION: In a photoelectric converter comprising a first conductivity type semiconductor substrate 2 having two kinds of second conductivity type layers 3 and 7 of different dopant density on the light receiving surface, a light receiving surface electrode 6, and a rear surface electrode 9, a recess is formed in the light receiving surface of the semiconductor substrate 2, the second conductivity type layer 7 having a high dopant density is arranged on the inner surface of the recess, and the light receiving surface electrode 6 is formed in contact with the second conductivity type layer 7 having a high dopant density. COPYRIGHT: (C)2004,JPO&NCIPI
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SOLUTION: In a photoelectric converter comprising a first conductivity type semiconductor substrate 2 having two kinds of second conductivity type layers 3 and 7 of different dopant density on the light receiving surface, a light receiving surface electrode 6, and a rear surface electrode 9, a recess is formed in the light receiving surface of the semiconductor substrate 2, the second conductivity type layer 7 having a high dopant density is arranged on the inner surface of the recess, and the light receiving surface electrode 6 is formed in contact with the second conductivity type layer 7 having a high dopant density. 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SOLUTION: In a photoelectric converter comprising a first conductivity type semiconductor substrate 2 having two kinds of second conductivity type layers 3 and 7 of different dopant density on the light receiving surface, a light receiving surface electrode 6, and a rear surface electrode 9, a recess is formed in the light receiving surface of the semiconductor substrate 2, the second conductivity type layer 7 having a high dopant density is arranged on the inner surface of the recess, and the light receiving surface electrode 6 is formed in contact with the second conductivity type layer 7 having a high dopant density. 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SOLUTION: In a photoelectric converter comprising a first conductivity type semiconductor substrate 2 having two kinds of second conductivity type layers 3 and 7 of different dopant density on the light receiving surface, a light receiving surface electrode 6, and a rear surface electrode 9, a recess is formed in the light receiving surface of the semiconductor substrate 2, the second conductivity type layer 7 having a high dopant density is arranged on the inner surface of the recess, and the light receiving surface electrode 6 is formed in contact with the second conductivity type layer 7 having a high dopant density. COPYRIGHT: (C)2004,JPO&amp;NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PHOTOELECTRIC CONVERTER AND ITS FABRICATING PROCESS
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