NITRIDE-BASED SEMICONDUCTOR ELEMENT

NITRIDE-BASED SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To solve the problem that damages happen on end surfaces of a laser resonator as the optical power of a semiconductor laser is more increased; to solve the problem that due to the firm crystal structure of a nitride-based semiconductor, the formation of its window structure per...

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Hauptverfasser: ENOHARA AKIRA, FURUYA HIROYUKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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creator ENOHARA AKIRA
FURUYA HIROYUKI
description PROBLEM TO BE SOLVED: To solve the problem that damages happen on end surfaces of a laser resonator as the optical power of a semiconductor laser is more increased; to solve the problem that due to the firm crystal structure of a nitride-based semiconductor, the formation of its window structure performed by an impurity diffusion, etc. which is one of countermeasures adopted conventionally in GaAs- and InP-based semiconductors, has been difficult. SOLUTION: The nitride-based semiconductor element is so constituted as to apply reflection coatings to its end surfaces In-Situ after removing micro-lacks caused by its cleavage from its end surfaces by the etching of using a low-energy ion beam. Thereby, the crystal defects present near its end surfaces are removed therefrom, and the structure of the element can be made robust to the damages of its end surfaces. COPYRIGHT: (C)2004,JPO&NCIPI
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SOLUTION: The nitride-based semiconductor element is so constituted as to apply reflection coatings to its end surfaces In-Situ after removing micro-lacks caused by its cleavage from its end surfaces by the etching of using a low-energy ion beam. Thereby, the crystal defects present near its end surfaces are removed therefrom, and the structure of the element can be made robust to the damages of its end surfaces. 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SOLUTION: The nitride-based semiconductor element is so constituted as to apply reflection coatings to its end surfaces In-Situ after removing micro-lacks caused by its cleavage from its end surfaces by the etching of using a low-energy ion beam. Thereby, the crystal defects present near its end surfaces are removed therefrom, and the structure of the element can be made robust to the damages of its end surfaces. 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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
title NITRIDE-BASED SEMICONDUCTOR ELEMENT
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