LEVEL SHIFT CIRCUIT

LEVEL SHIFT CIRCUIT

PROBLEM TO BE SOLVED: To provide a level shift circuit which can easily correspond to a power source change and whose circuit area is prevented from becoming large when a power source is changed. SOLUTION: When power voltage Vcc is inputted to an input terminal IN, high voltage HV is outputted from...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MATOBA SHINJI, CHIN GIYOUSHIYOU, ASANO MASAMICHI, OKAMURA SHUJI, TOKUNAGA TOMOSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator MATOBA SHINJI
CHIN GIYOUSHIYOU
ASANO MASAMICHI
OKAMURA SHUJI
TOKUNAGA TOMOSHI
description PROBLEM TO BE SOLVED: To provide a level shift circuit which can easily correspond to a power source change and whose circuit area is prevented from becoming large when a power source is changed. SOLUTION: When power voltage Vcc is inputted to an input terminal IN, high voltage HV is outputted from an output terminal OUT. When "0" (ground) is inputted to the input terminal IN, "0" is outputted from the output terminal OUT. In the circuit, FET 15 and 16 operate as resistors and resistance values change in accordance with voltage VB supplied to respective gates. Namely, synthesized resistance of FET 14 and 16 cab be changed and on-resistance of FET 14 can be changed by adjusting values of resistors 18 and 19. When power voltage is changed, on-resistance of FET 14 can be changed by adjusting the resistance values of the resistors 18 and 19 even if channel areas of FET 12 and 14 are not changed, and the circuit can easily correspond to a power voltage change. COPYRIGHT: (C)2004,JPO&NCIPI
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2004221865A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2004221865A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2004221865A3</originalsourceid><addsrcrecordid>eNrjZBD2cQ1z9VEI9vB0C1Fw9gxyDvUM4WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGJkZGhhZmpo7GRCkCAJAQHrM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LEVEL SHIFT CIRCUIT</title><source>esp@cenet</source><creator>MATOBA SHINJI ; CHIN GIYOUSHIYOU ; ASANO MASAMICHI ; OKAMURA SHUJI ; TOKUNAGA TOMOSHI</creator><creatorcontrib>MATOBA SHINJI ; CHIN GIYOUSHIYOU ; ASANO MASAMICHI ; OKAMURA SHUJI ; TOKUNAGA TOMOSHI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a level shift circuit which can easily correspond to a power source change and whose circuit area is prevented from becoming large when a power source is changed. SOLUTION: When power voltage Vcc is inputted to an input terminal IN, high voltage HV is outputted from an output terminal OUT. When "0" (ground) is inputted to the input terminal IN, "0" is outputted from the output terminal OUT. In the circuit, FET 15 and 16 operate as resistors and resistance values change in accordance with voltage VB supplied to respective gates. Namely, synthesized resistance of FET 14 and 16 cab be changed and on-resistance of FET 14 can be changed by adjusting values of resistors 18 and 19. When power voltage is changed, on-resistance of FET 14 can be changed by adjusting the resistance values of the resistors 18 and 19 even if channel areas of FET 12 and 14 are not changed, and the circuit can easily correspond to a power voltage change. COPYRIGHT: (C)2004,JPO&amp;NCIPI</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; PULSE TECHNIQUE ; STATIC STORES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040805&amp;DB=EPODOC&amp;CC=JP&amp;NR=2004221865A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040805&amp;DB=EPODOC&amp;CC=JP&amp;NR=2004221865A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATOBA SHINJI</creatorcontrib><creatorcontrib>CHIN GIYOUSHIYOU</creatorcontrib><creatorcontrib>ASANO MASAMICHI</creatorcontrib><creatorcontrib>OKAMURA SHUJI</creatorcontrib><creatorcontrib>TOKUNAGA TOMOSHI</creatorcontrib><title>LEVEL SHIFT CIRCUIT</title><description>PROBLEM TO BE SOLVED: To provide a level shift circuit which can easily correspond to a power source change and whose circuit area is prevented from becoming large when a power source is changed. SOLUTION: When power voltage Vcc is inputted to an input terminal IN, high voltage HV is outputted from an output terminal OUT. When "0" (ground) is inputted to the input terminal IN, "0" is outputted from the output terminal OUT. In the circuit, FET 15 and 16 operate as resistors and resistance values change in accordance with voltage VB supplied to respective gates. Namely, synthesized resistance of FET 14 and 16 cab be changed and on-resistance of FET 14 can be changed by adjusting values of resistors 18 and 19. When power voltage is changed, on-resistance of FET 14 can be changed by adjusting the resistance values of the resistors 18 and 19 even if channel areas of FET 12 and 14 are not changed, and the circuit can easily correspond to a power voltage change. COPYRIGHT: (C)2004,JPO&amp;NCIPI</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>PULSE TECHNIQUE</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBD2cQ1z9VEI9vB0C1Fw9gxyDvUM4WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGJkZGhhZmpo7GRCkCAJAQHrM</recordid><startdate>20040805</startdate><enddate>20040805</enddate><creator>MATOBA SHINJI</creator><creator>CHIN GIYOUSHIYOU</creator><creator>ASANO MASAMICHI</creator><creator>OKAMURA SHUJI</creator><creator>TOKUNAGA TOMOSHI</creator><scope>EVB</scope></search><sort><creationdate>20040805</creationdate><title>LEVEL SHIFT CIRCUIT</title><author>MATOBA SHINJI ; CHIN GIYOUSHIYOU ; ASANO MASAMICHI ; OKAMURA SHUJI ; TOKUNAGA TOMOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2004221865A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>PULSE TECHNIQUE</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>MATOBA SHINJI</creatorcontrib><creatorcontrib>CHIN GIYOUSHIYOU</creatorcontrib><creatorcontrib>ASANO MASAMICHI</creatorcontrib><creatorcontrib>OKAMURA SHUJI</creatorcontrib><creatorcontrib>TOKUNAGA TOMOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATOBA SHINJI</au><au>CHIN GIYOUSHIYOU</au><au>ASANO MASAMICHI</au><au>OKAMURA SHUJI</au><au>TOKUNAGA TOMOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LEVEL SHIFT CIRCUIT</title><date>2004-08-05</date><risdate>2004</risdate><abstract>PROBLEM TO BE SOLVED: To provide a level shift circuit which can easily correspond to a power source change and whose circuit area is prevented from becoming large when a power source is changed. SOLUTION: When power voltage Vcc is inputted to an input terminal IN, high voltage HV is outputted from an output terminal OUT. When "0" (ground) is inputted to the input terminal IN, "0" is outputted from the output terminal OUT. In the circuit, FET 15 and 16 operate as resistors and resistance values change in accordance with voltage VB supplied to respective gates. Namely, synthesized resistance of FET 14 and 16 cab be changed and on-resistance of FET 14 can be changed by adjusting values of resistors 18 and 19. When power voltage is changed, on-resistance of FET 14 can be changed by adjusting the resistance values of the resistors 18 and 19 even if channel areas of FET 12 and 14 are not changed, and the circuit can easily correspond to a power voltage change. COPYRIGHT: (C)2004,JPO&amp;NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2004221865A
source esp@cenet
subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
STATIC STORES
title LEVEL SHIFT CIRCUIT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T10%3A27%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MATOBA%20SHINJI&rft.date=2004-08-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2004221865A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true