METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To provide corrosion-proofing technology for a metal interconnect line formed by chemical mechanical polishing (CMP) method. SOLUTION: The method comprises a process that forms a metal layer containing copper as a main component on primary major face of a wafer having a primary...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HINODE KENJI, NOGUCHI JUNJI, OHASHI TADASHI, KONDO SEIICHI, YAMAGUCHI HIDE, OWADA NOBUO, IMAI TOSHINORI, HONMA YOSHIO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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