SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device in which unit cells have substantially the same areas and the same heights, a larger electrode area than that of a prior art are taken and capacity elements are highly integrated in the semiconductor device having the capacity elements of a stereoscopic structure containing a ferroelectric material or a high dielectric material, and to provide a method for manufacturing the same. SOLUTION: The semiconductor device includes a semiconductor substrate (100), a first interlayer insulating film (101) formed on the semiconductor substrate (100), a plug (102) formed so as to reach the semiconductor substrate (100) in this interlayer insulating film, an oxygen barrier film (103) formed so as to cover the plug (102), a lower electrode (105) formed on one part on the first interlayer insulating film (101), a capacity insulating film (106) using the ferroelectric material or the high dielectric material formed on the lower electrode (105), and an upper electrode (107) formed on the capacity insulating film (106). The lower electrode (105) is formed so as to bridge over the oxygen barrier film (103) and the first interlayer insulating film (101) at the bottom. COPYRIGHT: (C)2004,JPO&NCIPI