METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a worked depth measuring instrument capable of measuring accurately a height of a step difference. SOLUTION: This step difference measuring instrument 90 is provided with an irradiation means 60 for scanning a surface 1f of a sample 1 with incident light 6 to cross a...

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Hauptverfasser: FUJINO NAOHIKO, KINUGAWA MASARU
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creator FUJINO NAOHIKO
KINUGAWA MASARU
description PROBLEM TO BE SOLVED: To provide a worked depth measuring instrument capable of measuring accurately a height of a step difference. SOLUTION: This step difference measuring instrument 90 is provided with an irradiation means 60 for scanning a surface 1f of a sample 1 with incident light 6 to cross a groove of the sample 1 having the surface 1f formed with the groove, so as to irradiate it, a detector 3 for detecting reflected light 7 reflected on the surface 1f of the sample 1, and a calculation means 123 for calculating a depth of the groove based on the reflected light 7. The step difference measuring instrument 90 measures the depth of the groove deepened by working. The surface 1f of the sample includes the first and second faces, and a diameter of a beam spot is within a width between a width of the first face and a width of the second face. COPYRIGHT: (C)2004,JPO&NCIPI
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2004191176A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2004191176A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2004191176A3</originalsourceid><addsrcrecordid>eNqNjMsKwjAQRbtxIeo_DK4VWhXFZUgmTYRMSjJxW4rElWih_j---gGuLhfOOdOid8jGKxCkwFLkkBwSg_YBHIqYgqUaDNraMHgNkbEBZbXGgCRx9fWcoKSF5B88Bj-FiM5KTypJfj-FZytxXkyu3W3Ii3FnxVIjS7PO_aPNQ99d8j0_21OzKctddayqw15s_4JeM4o4Jw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>FUJINO NAOHIKO ; KINUGAWA MASARU</creator><creatorcontrib>FUJINO NAOHIKO ; KINUGAWA MASARU</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a worked depth measuring instrument capable of measuring accurately a height of a step difference. SOLUTION: This step difference measuring instrument 90 is provided with an irradiation means 60 for scanning a surface 1f of a sample 1 with incident light 6 to cross a groove of the sample 1 having the surface 1f formed with the groove, so as to irradiate it, a detector 3 for detecting reflected light 7 reflected on the surface 1f of the sample 1, and a calculation means 123 for calculating a depth of the groove based on the reflected light 7. The step difference measuring instrument 90 measures the depth of the groove deepened by working. The surface 1f of the sample includes the first and second faces, and a diameter of a beam spot is within a width between a width of the first face and a width of the second face. COPYRIGHT: (C)2004,JPO&amp;NCIPI</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040708&amp;DB=EPODOC&amp;CC=JP&amp;NR=2004191176A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040708&amp;DB=EPODOC&amp;CC=JP&amp;NR=2004191176A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUJINO NAOHIKO</creatorcontrib><creatorcontrib>KINUGAWA MASARU</creatorcontrib><title>METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a worked depth measuring instrument capable of measuring accurately a height of a step difference. SOLUTION: This step difference measuring instrument 90 is provided with an irradiation means 60 for scanning a surface 1f of a sample 1 with incident light 6 to cross a groove of the sample 1 having the surface 1f formed with the groove, so as to irradiate it, a detector 3 for detecting reflected light 7 reflected on the surface 1f of the sample 1, and a calculation means 123 for calculating a depth of the groove based on the reflected light 7. The step difference measuring instrument 90 measures the depth of the groove deepened by working. The surface 1f of the sample includes the first and second faces, and a diameter of a beam spot is within a width between a width of the first face and a width of the second face. COPYRIGHT: (C)2004,JPO&amp;NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjMsKwjAQRbtxIeo_DK4VWhXFZUgmTYRMSjJxW4rElWih_j---gGuLhfOOdOid8jGKxCkwFLkkBwSg_YBHIqYgqUaDNraMHgNkbEBZbXGgCRx9fWcoKSF5B88Bj-FiM5KTypJfj-FZytxXkyu3W3Ii3FnxVIjS7PO_aPNQ99d8j0_21OzKctddayqw15s_4JeM4o4Jw</recordid><startdate>20040708</startdate><enddate>20040708</enddate><creator>FUJINO NAOHIKO</creator><creator>KINUGAWA MASARU</creator><scope>EVB</scope></search><sort><creationdate>20040708</creationdate><title>METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE</title><author>FUJINO NAOHIKO ; KINUGAWA MASARU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2004191176A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>FUJINO NAOHIKO</creatorcontrib><creatorcontrib>KINUGAWA MASARU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUJINO NAOHIKO</au><au>KINUGAWA MASARU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE</title><date>2004-07-08</date><risdate>2004</risdate><abstract>PROBLEM TO BE SOLVED: To provide a worked depth measuring instrument capable of measuring accurately a height of a step difference. SOLUTION: This step difference measuring instrument 90 is provided with an irradiation means 60 for scanning a surface 1f of a sample 1 with incident light 6 to cross a groove of the sample 1 having the surface 1f formed with the groove, so as to irradiate it, a detector 3 for detecting reflected light 7 reflected on the surface 1f of the sample 1, and a calculation means 123 for calculating a depth of the groove based on the reflected light 7. The step difference measuring instrument 90 measures the depth of the groove deepened by working. The surface 1f of the sample includes the first and second faces, and a diameter of a beam spot is within a width between a width of the first face and a width of the second face. COPYRIGHT: (C)2004,JPO&amp;NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
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