METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a worked depth measuring instrument capable of measuring accurately a height of a step difference. SOLUTION: This step difference measuring instrument 90 is provided with an irradiation means 60 for scanning a surface 1f of a sample 1 with incident light 6 to cross a...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | FUJINO NAOHIKO KINUGAWA MASARU |
description | PROBLEM TO BE SOLVED: To provide a worked depth measuring instrument capable of measuring accurately a height of a step difference. SOLUTION: This step difference measuring instrument 90 is provided with an irradiation means 60 for scanning a surface 1f of a sample 1 with incident light 6 to cross a groove of the sample 1 having the surface 1f formed with the groove, so as to irradiate it, a detector 3 for detecting reflected light 7 reflected on the surface 1f of the sample 1, and a calculation means 123 for calculating a depth of the groove based on the reflected light 7. The step difference measuring instrument 90 measures the depth of the groove deepened by working. The surface 1f of the sample includes the first and second faces, and a diameter of a beam spot is within a width between a width of the first face and a width of the second face. COPYRIGHT: (C)2004,JPO&NCIPI |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2004191176A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2004191176A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2004191176A3</originalsourceid><addsrcrecordid>eNqNjMsKwjAQRbtxIeo_DK4VWhXFZUgmTYRMSjJxW4rElWih_j---gGuLhfOOdOid8jGKxCkwFLkkBwSg_YBHIqYgqUaDNraMHgNkbEBZbXGgCRx9fWcoKSF5B88Bj-FiM5KTypJfj-FZytxXkyu3W3Ii3FnxVIjS7PO_aPNQ99d8j0_21OzKctddayqw15s_4JeM4o4Jw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>FUJINO NAOHIKO ; KINUGAWA MASARU</creator><creatorcontrib>FUJINO NAOHIKO ; KINUGAWA MASARU</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a worked depth measuring instrument capable of measuring accurately a height of a step difference. SOLUTION: This step difference measuring instrument 90 is provided with an irradiation means 60 for scanning a surface 1f of a sample 1 with incident light 6 to cross a groove of the sample 1 having the surface 1f formed with the groove, so as to irradiate it, a detector 3 for detecting reflected light 7 reflected on the surface 1f of the sample 1, and a calculation means 123 for calculating a depth of the groove based on the reflected light 7. The step difference measuring instrument 90 measures the depth of the groove deepened by working. The surface 1f of the sample includes the first and second faces, and a diameter of a beam spot is within a width between a width of the first face and a width of the second face. COPYRIGHT: (C)2004,JPO&NCIPI</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040708&DB=EPODOC&CC=JP&NR=2004191176A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040708&DB=EPODOC&CC=JP&NR=2004191176A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUJINO NAOHIKO</creatorcontrib><creatorcontrib>KINUGAWA MASARU</creatorcontrib><title>METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a worked depth measuring instrument capable of measuring accurately a height of a step difference. SOLUTION: This step difference measuring instrument 90 is provided with an irradiation means 60 for scanning a surface 1f of a sample 1 with incident light 6 to cross a groove of the sample 1 having the surface 1f formed with the groove, so as to irradiate it, a detector 3 for detecting reflected light 7 reflected on the surface 1f of the sample 1, and a calculation means 123 for calculating a depth of the groove based on the reflected light 7. The step difference measuring instrument 90 measures the depth of the groove deepened by working. The surface 1f of the sample includes the first and second faces, and a diameter of a beam spot is within a width between a width of the first face and a width of the second face. COPYRIGHT: (C)2004,JPO&NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjMsKwjAQRbtxIeo_DK4VWhXFZUgmTYRMSjJxW4rElWih_j---gGuLhfOOdOid8jGKxCkwFLkkBwSg_YBHIqYgqUaDNraMHgNkbEBZbXGgCRx9fWcoKSF5B88Bj-FiM5KTypJfj-FZytxXkyu3W3Ii3FnxVIjS7PO_aPNQ99d8j0_21OzKctddayqw15s_4JeM4o4Jw</recordid><startdate>20040708</startdate><enddate>20040708</enddate><creator>FUJINO NAOHIKO</creator><creator>KINUGAWA MASARU</creator><scope>EVB</scope></search><sort><creationdate>20040708</creationdate><title>METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE</title><author>FUJINO NAOHIKO ; KINUGAWA MASARU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2004191176A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>FUJINO NAOHIKO</creatorcontrib><creatorcontrib>KINUGAWA MASARU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUJINO NAOHIKO</au><au>KINUGAWA MASARU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE</title><date>2004-07-08</date><risdate>2004</risdate><abstract>PROBLEM TO BE SOLVED: To provide a worked depth measuring instrument capable of measuring accurately a height of a step difference. SOLUTION: This step difference measuring instrument 90 is provided with an irradiation means 60 for scanning a surface 1f of a sample 1 with incident light 6 to cross a groove of the sample 1 having the surface 1f formed with the groove, so as to irradiate it, a detector 3 for detecting reflected light 7 reflected on the surface 1f of the sample 1, and a calculation means 123 for calculating a depth of the groove based on the reflected light 7. The step difference measuring instrument 90 measures the depth of the groove deepened by working. The surface 1f of the sample includes the first and second faces, and a diameter of a beam spot is within a width between a width of the first face and a width of the second face. COPYRIGHT: (C)2004,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_JP2004191176A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING |
title | METHOD AND INSTRUMENT FOR MEASURING HEIGHT OF STEP DIFFERENCE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T07%3A46%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FUJINO%20NAOHIKO&rft.date=2004-07-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2004191176A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |