METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving the surface roughness of an upper section in a floating gate electrode by performing nitriding process after forming a floating gate and capable of simplifying the nitriding process and a dielectri...
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| creator | DONG CHA DEOK SHIN SHIYOUYU |
| description | PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving the surface roughness of an upper section in a floating gate electrode by performing nitriding process after forming a floating gate and capable of simplifying the nitriding process and a dielectric film formation process in situ. SOLUTION: The method of manufacturing the semiconductor device comprises a step of providing a semiconductor substrate where the floating gate electrode is formed, a step of performing the nitriding process on the upper section of the floating gate electrode, a step of forming the dielectric film along the ramp of the resultant substance and a step of forming a material film for a control gate electrode on the dielectric film, wherein the step of performing the nitriding process on the upper section of the floating gate electrode and the step of forming the dielectric film are performed in situ in the same chamber. COPYRIGHT: (C)2004,JPO |
| format | Patent |
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SOLUTION: The method of manufacturing the semiconductor device comprises a step of providing a semiconductor substrate where the floating gate electrode is formed, a step of performing the nitriding process on the upper section of the floating gate electrode, a step of forming the dielectric film along the ramp of the resultant substance and a step of forming a material film for a control gate electrode on the dielectric film, wherein the step of performing the nitriding process on the upper section of the floating gate electrode and the step of forming the dielectric film are performed in situ in the same chamber. COPYRIGHT: (C)2004,JPO</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040624&DB=EPODOC&CC=JP&NR=2004179624A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040624&DB=EPODOC&CC=JP&NR=2004179624A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DONG CHA DEOK</creatorcontrib><creatorcontrib>SHIN SHIYOUYU</creatorcontrib><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving the surface roughness of an upper section in a floating gate electrode by performing nitriding process after forming a floating gate and capable of simplifying the nitriding process and a dielectric film formation process in situ. SOLUTION: The method of manufacturing the semiconductor device comprises a step of providing a semiconductor substrate where the floating gate electrode is formed, a step of performing the nitriding process on the upper section of the floating gate electrode, a step of forming the dielectric film along the ramp of the resultant substance and a step of forming a material film for a control gate electrode on the dielectric film, wherein the step of performing the nitriding process on the upper section of the floating gate electrode and the step of forming the dielectric film are performed in situ in the same chamber. 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SOLUTION: The method of manufacturing the semiconductor device comprises a step of providing a semiconductor substrate where the floating gate electrode is formed, a step of performing the nitriding process on the upper section of the floating gate electrode, a step of forming the dielectric film along the ramp of the resultant substance and a step of forming a material film for a control gate electrode on the dielectric film, wherein the step of performing the nitriding process on the upper section of the floating gate electrode and the step of forming the dielectric film are performed in situ in the same chamber. COPYRIGHT: (C)2004,JPO</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
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