PLASMA PROCESSING METHOD AND DEVICE

PROBLEM TO BE SOLVED: To provide a plasma processing method and a device capable of realizing a high accuracy of form and roughness of a processed surface in processing of an optical component or a die of a complicated shape such as a free-form surface. SOLUTION: A plasma 16 is generated between a p...

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Bibliographische Detailangaben
Hauptverfasser:	TAKAHASHI MASAYUKI, MURO SHINKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma processing method and a device capable of realizing a high accuracy of form and roughness of a processed surface in processing of an optical component or a die of a complicated shape such as a free-form surface. SOLUTION: A plasma 16 is generated between a processed article 11 coated with a thin compound film with its processed face containing carbon and a tool electrode 13 by impressing voltage on the tool electrode 13 while supplying gas including oxygen between the processed article 11 and the tool electrode 13, and the thin compound film 12 on the processed face is processed with oxygen radical generated from the plasma 16. COPYRIGHT: (C)2004,JPO