METHOD FOR MANUFACTURING FLASH MEMORY

PROBLEM TO BE SOLVED: To provide a method for manufacturing a flash memory which can form cell regions and peripheral circuit regions by differentiating their trench depths at a shallow trench isolation process time of the memory. SOLUTION: The method for manufacturing the flash memory includes a st...

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Hauptverfasser:	TEI SEIBUN, KIN SENJU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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