HEATING ELEMENT FOR MICROFLUIDIC AND MICROMECHANICAL APPLICATIONS
PROBLEM TO BE SOLVED: To provide a small-sized improved heater using a transistor. SOLUTION: An integrated heater formed as a field effect transistor in a semiconductor substrate 12, with the transistor having source region 14 and a drain region 16 with a channel region extending therebetween to con...
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creator | LO PRIORE STEFANO SANTORUVO GAETANO |
description | PROBLEM TO BE SOLVED: To provide a small-sized improved heater using a transistor. SOLUTION: An integrated heater formed as a field effect transistor in a semiconductor substrate 12, with the transistor having source region 14 and a drain region 16 with a channel region extending therebetween to conduct current. The channel region has a resistance RDSwhen conducting current to generate heat above a selected threshold. A dielectric layer 24 is disposed on the channel region 20 and a gate electrode 26 is disposed on the dielectric layer to control the current of the channel region 20. A thermally insulating barrier may be formed in the semiconductor material extending about the transistor. The object 32 to be heated is positioned to receive the heat generated by the resistance RDSof the channel region 20, and the object 32 to be heated may be a fluid chamber. COPYRIGHT: (C)2004,JPO |
format | Patent |
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SOLUTION: An integrated heater formed as a field effect transistor in a semiconductor substrate 12, with the transistor having source region 14 and a drain region 16 with a channel region extending therebetween to conduct current. The channel region has a resistance RDSwhen conducting current to generate heat above a selected threshold. A dielectric layer 24 is disposed on the channel region 20 and a gate electrode 26 is disposed on the dielectric layer to control the current of the channel region 20. A thermally insulating barrier may be formed in the semiconductor material extending about the transistor. The object 32 to be heated is positioned to receive the heat generated by the resistance RDSof the channel region 20, and the object 32 to be heated may be a fluid chamber. 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SOLUTION: An integrated heater formed as a field effect transistor in a semiconductor substrate 12, with the transistor having source region 14 and a drain region 16 with a channel region extending therebetween to conduct current. The channel region has a resistance RDSwhen conducting current to generate heat above a selected threshold. A dielectric layer 24 is disposed on the channel region 20 and a gate electrode 26 is disposed on the dielectric layer to control the current of the channel region 20. A thermally insulating barrier may be formed in the semiconductor material extending about the transistor. The object 32 to be heated is positioned to receive the heat generated by the resistance RDSof the channel region 20, and the object 32 to be heated may be a fluid chamber. 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SOLUTION: An integrated heater formed as a field effect transistor in a semiconductor substrate 12, with the transistor having source region 14 and a drain region 16 with a channel region extending therebetween to conduct current. The channel region has a resistance RDSwhen conducting current to generate heat above a selected threshold. A dielectric layer 24 is disposed on the channel region 20 and a gate electrode 26 is disposed on the dielectric layer to control the current of the channel region 20. A thermally insulating barrier may be formed in the semiconductor material extending about the transistor. The object 32 to be heated is positioned to receive the heat generated by the resistance RDSof the channel region 20, and the object 32 to be heated may be a fluid chamber. COPYRIGHT: (C)2004,JPO</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CORRECTION OF TYPOGRAPHICAL ERRORS ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME LINING MACHINES MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRINTING SELECTIVE PRINTING MECHANISMS SEMICONDUCTOR DEVICES STAMPS THEIR RELEVANT APPARATUS TRANSPORTING TYPEWRITERS |
title | HEATING ELEMENT FOR MICROFLUIDIC AND MICROMECHANICAL APPLICATIONS |
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