SEMICONDUCTOR LASER ELEMENT AND ITS FABRICATING METHOD

SEMICONDUCTOR LASER ELEMENT AND ITS FABRICATING METHOD

PROBLEM TO BE SOLVED: To enhance the reliability and the yield of a ridge waveguide semiconductor laser element while minimizing increase of fabrication process. SOLUTION: A ridge protective layer 10 patterned into stripe is provided on the opposite sides of a ridge waveguide 11 through a space regi...

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Hauptverfasser: KANI YOSHIYUKI, HIRATAKA TOSHINORI, UCHIDA KENJI, KATO YUKIO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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creator KANI YOSHIYUKI
HIRATAKA TOSHINORI
UCHIDA KENJI
KATO YUKIO
description PROBLEM TO BE SOLVED: To enhance the reliability and the yield of a ridge waveguide semiconductor laser element while minimizing increase of fabrication process. SOLUTION: A ridge protective layer 10 patterned into stripe is provided on the opposite sides of a ridge waveguide 11 through a space region. The ridge protective layer 10 is composed of a high resistance semiconductor material of nondoped InP or Fe doped InP. Since the upper surface of the ridge protective layer 10 is lower than the upper surface of the waveguide 11, the ridge waveguide 11 is protected against damage during fabrication process of element and chipping of crystal is reduced significantly. COPYRIGHT: (C)2004,JPO
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
title SEMICONDUCTOR LASER ELEMENT AND ITS FABRICATING METHOD
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