SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an electrode structure for a bonding pad, which is provided with a sufficiently large allowable current and improved so that cracks are not generated in an insulation film between layers by mechanical stress upon wire bonding. SOLUTION: The insulation films 2a, 2b are provided directly between layers on a semiconductor base plate 1. An uppermost layer wiring layer 4 is provided on the insulation films 2a, 2b between layers. Since cracks are not generated in the insulation films 2a, 2b between layers upon wire bonding, since a lower layer wiring layer does not exist immediately below a part 4a in the uppermost layer wiring layer used for the bonding pad, while the uppermost wiring layer 4 is connected to lower layer wiring layers 3a, 3b, whereby a current, entering into the bonding pad, is scattered into the wiring layers. COPYRIGHT: (C)2004,JPO