FLASH MEMORY CELL AND METHOD OF MANUFACTURING THE SAME, AND PROGRAMMING, ERASING, AND READING METHODS THEREIN

PROBLEM TO BE SOLVED: To provide a flash memory cell and a method of manufacturing the same that enables to improve electric characteristics and to increase a degree of integration of elements while at the same time reducing the number of steps of a process, and also to provide programming, erasing,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BOKU HEISHU, CHUNG SUNG JAE, AHN BYUNG JIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!