POWER SEMICONDUCTOR DEVICE AND HEAT RADIATOR

PROBLEM TO BE SOLVED: To solve the problem that a soldering junction layer is increased by interposing a buffer plate to relieve thermal stresses in the conventional element structure, defects such as void of solder or the like are increased by decreasing element characteristics since heat resistanc...

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Hauptverfasser: KUSHIMA TADAO, NAKAJIMA TSUTOMU, SUZUKI KAZUHIRO, YAMAZAKI TATSUO, KODAMA HIRONORI
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creator KUSHIMA TADAO
NAKAJIMA TSUTOMU
SUZUKI KAZUHIRO
YAMAZAKI TATSUO
KODAMA HIRONORI
description PROBLEM TO BE SOLVED: To solve the problem that a soldering junction layer is increased by interposing a buffer plate to relieve thermal stresses in the conventional element structure, defects such as void of solder or the like are increased by decreasing element characteristics since heat resistance tends to become large and by increasing the soldering junction layers, decrease in thermal conductivity causes an element life time is shortened. SOLUTION: In the power semiconductor device where a metal container having a cylinder with its one-end-sealed structure, a semiconductor chip having a p-n junction where one main surface is subjected to soldering to the bottom surface section of the metal container, a lead that is subjected to soldering to the other main surface of the semiconductor chip, and the exposure surface of the semiconductor chip is covered with a silicone resin layer containing silica powder, a Cu-invar-Cu lamination plate or a copper compound structure made of Cu and Cu2O is changed into a lamination integrated container at a local welding section at the bottom surface section of the metal container. COPYRIGHT: (C)2003,JPO
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2003179191A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2003179191A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2003179191A3</originalsourceid><addsrcrecordid>eNrjZNAJ8A93DVIIdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HB1DFEIcnTxdARK8DCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMDY0NzS0NLQ0djohQBAN4aJZA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>POWER SEMICONDUCTOR DEVICE AND HEAT RADIATOR</title><source>esp@cenet</source><creator>KUSHIMA TADAO ; NAKAJIMA TSUTOMU ; SUZUKI KAZUHIRO ; YAMAZAKI TATSUO ; KODAMA HIRONORI</creator><creatorcontrib>KUSHIMA TADAO ; NAKAJIMA TSUTOMU ; SUZUKI KAZUHIRO ; YAMAZAKI TATSUO ; KODAMA HIRONORI</creatorcontrib><description>PROBLEM TO BE SOLVED: To solve the problem that a soldering junction layer is increased by interposing a buffer plate to relieve thermal stresses in the conventional element structure, defects such as void of solder or the like are increased by decreasing element characteristics since heat resistance tends to become large and by increasing the soldering junction layers, decrease in thermal conductivity causes an element life time is shortened. SOLUTION: In the power semiconductor device where a metal container having a cylinder with its one-end-sealed structure, a semiconductor chip having a p-n junction where one main surface is subjected to soldering to the bottom surface section of the metal container, a lead that is subjected to soldering to the other main surface of the semiconductor chip, and the exposure surface of the semiconductor chip is covered with a silicone resin layer containing silica powder, a Cu-invar-Cu lamination plate or a copper compound structure made of Cu and Cu2O is changed into a lamination integrated container at a local welding section at the bottom surface section of the metal container. COPYRIGHT: (C)2003,JPO</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20030627&amp;DB=EPODOC&amp;CC=JP&amp;NR=2003179191A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20030627&amp;DB=EPODOC&amp;CC=JP&amp;NR=2003179191A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUSHIMA TADAO</creatorcontrib><creatorcontrib>NAKAJIMA TSUTOMU</creatorcontrib><creatorcontrib>SUZUKI KAZUHIRO</creatorcontrib><creatorcontrib>YAMAZAKI TATSUO</creatorcontrib><creatorcontrib>KODAMA HIRONORI</creatorcontrib><title>POWER SEMICONDUCTOR DEVICE AND HEAT RADIATOR</title><description>PROBLEM TO BE SOLVED: To solve the problem that a soldering junction layer is increased by interposing a buffer plate to relieve thermal stresses in the conventional element structure, defects such as void of solder or the like are increased by decreasing element characteristics since heat resistance tends to become large and by increasing the soldering junction layers, decrease in thermal conductivity causes an element life time is shortened. SOLUTION: In the power semiconductor device where a metal container having a cylinder with its one-end-sealed structure, a semiconductor chip having a p-n junction where one main surface is subjected to soldering to the bottom surface section of the metal container, a lead that is subjected to soldering to the other main surface of the semiconductor chip, and the exposure surface of the semiconductor chip is covered with a silicone resin layer containing silica powder, a Cu-invar-Cu lamination plate or a copper compound structure made of Cu and Cu2O is changed into a lamination integrated container at a local welding section at the bottom surface section of the metal container. COPYRIGHT: (C)2003,JPO</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAJ8A93DVIIdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HB1DFEIcnTxdARK8DCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMDY0NzS0NLQ0djohQBAN4aJZA</recordid><startdate>20030627</startdate><enddate>20030627</enddate><creator>KUSHIMA TADAO</creator><creator>NAKAJIMA TSUTOMU</creator><creator>SUZUKI KAZUHIRO</creator><creator>YAMAZAKI TATSUO</creator><creator>KODAMA HIRONORI</creator><scope>EVB</scope></search><sort><creationdate>20030627</creationdate><title>POWER SEMICONDUCTOR DEVICE AND HEAT RADIATOR</title><author>KUSHIMA TADAO ; NAKAJIMA TSUTOMU ; SUZUKI KAZUHIRO ; YAMAZAKI TATSUO ; KODAMA HIRONORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2003179191A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KUSHIMA TADAO</creatorcontrib><creatorcontrib>NAKAJIMA TSUTOMU</creatorcontrib><creatorcontrib>SUZUKI KAZUHIRO</creatorcontrib><creatorcontrib>YAMAZAKI TATSUO</creatorcontrib><creatorcontrib>KODAMA HIRONORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KUSHIMA TADAO</au><au>NAKAJIMA TSUTOMU</au><au>SUZUKI KAZUHIRO</au><au>YAMAZAKI TATSUO</au><au>KODAMA HIRONORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POWER SEMICONDUCTOR DEVICE AND HEAT RADIATOR</title><date>2003-06-27</date><risdate>2003</risdate><abstract>PROBLEM TO BE SOLVED: To solve the problem that a soldering junction layer is increased by interposing a buffer plate to relieve thermal stresses in the conventional element structure, defects such as void of solder or the like are increased by decreasing element characteristics since heat resistance tends to become large and by increasing the soldering junction layers, decrease in thermal conductivity causes an element life time is shortened. SOLUTION: In the power semiconductor device where a metal container having a cylinder with its one-end-sealed structure, a semiconductor chip having a p-n junction where one main surface is subjected to soldering to the bottom surface section of the metal container, a lead that is subjected to soldering to the other main surface of the semiconductor chip, and the exposure surface of the semiconductor chip is covered with a silicone resin layer containing silica powder, a Cu-invar-Cu lamination plate or a copper compound structure made of Cu and Cu2O is changed into a lamination integrated container at a local welding section at the bottom surface section of the metal container. COPYRIGHT: (C)2003,JPO</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title POWER SEMICONDUCTOR DEVICE AND HEAT RADIATOR
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