PINNED LAYER, SPIN VALVE STRUCTURE AND ITS FORMING METHOD

PROBLEM TO BE SOLVED: To provide a spin valve structure wherein superior thermal stability can be ensured in a reverse magnetic field, its forming method and a pinned layer which acts as one constituent of the spin valve structure. SOLUTION: The pinned layer 35 comprises a laminate wherein a nickel...

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Hauptverfasser: EI FUKUSHO, SEI SHUKO, MIN RI, NYO EIDO
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creator EI FUKUSHO
SEI SHUKO
MIN RI
NYO EIDO
description PROBLEM TO BE SOLVED: To provide a spin valve structure wherein superior thermal stability can be ensured in a reverse magnetic field, its forming method and a pinned layer which acts as one constituent of the spin valve structure. SOLUTION: The pinned layer 35 comprises a laminate wherein a nickel chromium alloy layer 32 is interposed between a cobalt iron alloy layer 31 and a cobalt iron alloy layer 33, and especially, the pinned layer 35 is so constituted that the thickness of the cobalt iron alloy layer 31 which is positioned on a near side to a spacer layer 24 becomes about the twice of the cobalt iron alloy layer 33. In the spin valve structure which is provided with the pinned layer 35, deterioration of characteristic which is caused by temperature rise in annealing is restrained, so that superior thermal stability can be ensured in a reverse magnetic field. COPYRIGHT: (C)2003,JPO
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2003174213A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2003174213A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2003174213A3</originalsourceid><addsrcrecordid>eNrjZLAM8PTzc3VR8HGMdA3SUQgGchXCHH3CXBWCQ4JCnUNCg1wVHP1cFDxDghXc_IN8Pf3cFXxdQzz8XXgYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBgbGhuYmRobGjMVGKAM_AKQg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PINNED LAYER, SPIN VALVE STRUCTURE AND ITS FORMING METHOD</title><source>esp@cenet</source><creator>EI FUKUSHO ; SEI SHUKO ; MIN RI ; NYO EIDO</creator><creatorcontrib>EI FUKUSHO ; SEI SHUKO ; MIN RI ; NYO EIDO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a spin valve structure wherein superior thermal stability can be ensured in a reverse magnetic field, its forming method and a pinned layer which acts as one constituent of the spin valve structure. SOLUTION: The pinned layer 35 comprises a laminate wherein a nickel chromium alloy layer 32 is interposed between a cobalt iron alloy layer 31 and a cobalt iron alloy layer 33, and especially, the pinned layer 35 is so constituted that the thickness of the cobalt iron alloy layer 31 which is positioned on a near side to a spacer layer 24 becomes about the twice of the cobalt iron alloy layer 33. In the spin valve structure which is provided with the pinned layer 35, deterioration of characteristic which is caused by temperature rise in annealing is restrained, so that superior thermal stability can be ensured in a reverse magnetic field. COPYRIGHT: (C)2003,JPO</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRICITY ; INDUCTANCES ; INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; MAGNETS ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; TESTING ; TRANSFORMERS</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20030620&amp;DB=EPODOC&amp;CC=JP&amp;NR=2003174213A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20030620&amp;DB=EPODOC&amp;CC=JP&amp;NR=2003174213A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>EI FUKUSHO</creatorcontrib><creatorcontrib>SEI SHUKO</creatorcontrib><creatorcontrib>MIN RI</creatorcontrib><creatorcontrib>NYO EIDO</creatorcontrib><title>PINNED LAYER, SPIN VALVE STRUCTURE AND ITS FORMING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a spin valve structure wherein superior thermal stability can be ensured in a reverse magnetic field, its forming method and a pinned layer which acts as one constituent of the spin valve structure. SOLUTION: The pinned layer 35 comprises a laminate wherein a nickel chromium alloy layer 32 is interposed between a cobalt iron alloy layer 31 and a cobalt iron alloy layer 33, and especially, the pinned layer 35 is so constituted that the thickness of the cobalt iron alloy layer 31 which is positioned on a near side to a spacer layer 24 becomes about the twice of the cobalt iron alloy layer 33. In the spin valve structure which is provided with the pinned layer 35, deterioration of characteristic which is caused by temperature rise in annealing is restrained, so that superior thermal stability can be ensured in a reverse magnetic field. COPYRIGHT: (C)2003,JPO</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>MAGNETS</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>TESTING</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAM8PTzc3VR8HGMdA3SUQgGchXCHH3CXBWCQ4JCnUNCg1wVHP1cFDxDghXc_IN8Pf3cFXxdQzz8XXgYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBgbGhuYmRobGjMVGKAM_AKQg</recordid><startdate>20030620</startdate><enddate>20030620</enddate><creator>EI FUKUSHO</creator><creator>SEI SHUKO</creator><creator>MIN RI</creator><creator>NYO EIDO</creator><scope>EVB</scope></search><sort><creationdate>20030620</creationdate><title>PINNED LAYER, SPIN VALVE STRUCTURE AND ITS FORMING METHOD</title><author>EI FUKUSHO ; SEI SHUKO ; MIN RI ; NYO EIDO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2003174213A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>MAGNETS</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>TESTING</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>EI FUKUSHO</creatorcontrib><creatorcontrib>SEI SHUKO</creatorcontrib><creatorcontrib>MIN RI</creatorcontrib><creatorcontrib>NYO EIDO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>EI FUKUSHO</au><au>SEI SHUKO</au><au>MIN RI</au><au>NYO EIDO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PINNED LAYER, SPIN VALVE STRUCTURE AND ITS FORMING METHOD</title><date>2003-06-20</date><risdate>2003</risdate><abstract>PROBLEM TO BE SOLVED: To provide a spin valve structure wherein superior thermal stability can be ensured in a reverse magnetic field, its forming method and a pinned layer which acts as one constituent of the spin valve structure. SOLUTION: The pinned layer 35 comprises a laminate wherein a nickel chromium alloy layer 32 is interposed between a cobalt iron alloy layer 31 and a cobalt iron alloy layer 33, and especially, the pinned layer 35 is so constituted that the thickness of the cobalt iron alloy layer 31 which is positioned on a near side to a spacer layer 24 becomes about the twice of the cobalt iron alloy layer 33. In the spin valve structure which is provided with the pinned layer 35, deterioration of characteristic which is caused by temperature rise in annealing is restrained, so that superior thermal stability can be ensured in a reverse magnetic field. COPYRIGHT: (C)2003,JPO</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MAGNETS
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
TESTING
TRANSFORMERS
title PINNED LAYER, SPIN VALVE STRUCTURE AND ITS FORMING METHOD
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