METHOD FOR MANUFACTURING FLASH MEMORY DEVICE

METHOD FOR MANUFACTURING FLASH MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a flash memory device capable of not only improving a word line resistance but also improving the quality of a dielectric film and a gate oxide film of a peripheral circuit region. SOLUTION: The method for manufacturing the flash memory dev...

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Hauptverfasser: KIN KIJUN, CHIN KONSHU, KIN HOKICHI, RI KONU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KIN KIJUN
CHIN KONSHU
KIN HOKICHI
RI KONU
description PROBLEM TO BE SOLVED: To provide a method for manufacturing a flash memory device capable of not only improving a word line resistance but also improving the quality of a dielectric film and a gate oxide film of a peripheral circuit region. SOLUTION: The method for manufacturing the flash memory device comprises the steps of forming the dielectric film 25, and then forming an amorphous silicon layer 31 to alleviate a topology generated by patterning a first polysilicon layer 24 in a cell region so that the silicon layer 31 conducts a role of a dielectric film protective layer of the cell region at the time of forming the gate oxide film 26 of the peripheral circuit region. COPYRIGHT: (C)2003,JPO
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR MANUFACTURING FLASH MEMORY DEVICE
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