METHOD FOR FORMING T-SHAPE GATE ELECTRODE

PROBLEM TO BE SOLVED: To stably form a T-shape gate electrode having a short gate length and a low resistance. SOLUTION: The method for forming the T-shape gate electrode comprises the steps of forming a first photoresist pattern having a first opening 35b including a tapered sidewall, and coating a...

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Hauptverfasser:	UMIBE KATSUAKI, SANO YOSHIAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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