METHOD FOR FORMING T-SHAPE GATE ELECTRODE

METHOD FOR FORMING T-SHAPE GATE ELECTRODE

PROBLEM TO BE SOLVED: To stably form a T-shape gate electrode having a short gate length and a low resistance. SOLUTION: The method for forming the T-shape gate electrode comprises the steps of forming a first photoresist pattern having a first opening 35b including a tapered sidewall, and coating a...

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Hauptverfasser: UMIBE KATSUAKI, SANO YOSHIAKI
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator UMIBE KATSUAKI
SANO YOSHIAKI
description PROBLEM TO BE SOLVED: To stably form a T-shape gate electrode having a short gate length and a low resistance. SOLUTION: The method for forming the T-shape gate electrode comprises the steps of forming a first photoresist pattern having a first opening 35b including a tapered sidewall, and coating a first metal layer 36 having Schottky characteristics thereon. The method further comprises the steps of then opening to include the first opening, forming a second photoresist pattern 37 having a second opening 37a of an overhanging-like sectional shape at the sidewall, and then coating a second metal layer 39 thereon. The method also comprises a step of then removing the second photoresist pattern and the second metal layer on the pattern by a lifting-off method. The method also comprises the steps of removing the exposed part of the first metal layer by etching with the gate electrode upper part pattern 38a formed as above as a mask, and forming the gate electrode lower pattern 36a. The method also comprises a step of forming a T-shape gate electrode 40 by removing the first resist pattern.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR FORMING T-SHAPE GATE ELECTRODE
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