GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a GaN-based compound semiconductor light emitting element which can improve light emitting efficiency, and to provide its manufacturing method. SOLUTION: A p-electrode 6 as a bonding electrode is formed while it is directly in contact with a p-type layer 4 made of p-type GaN-based compound semiconductor, and a current diffusion layer 5 that has light transmitting property as well as higher conductivity that the p-type layer 4 is formed in a part on the surface of the p-type layer 4 excluding the p-electrode 6. The p-electrode 6 is formed of such a material that cannot form ohmic junction between the p-type layer 4 and itself, so that a current does not flow from the p-electrode 6 to a part with which the p-electrode 6 of the p-type layer 4 is in direct contact. Therefore, light emission is prohibited just beneath the p-electrode 6, and the efficiency of light emission can be improved when compared with the conventional GaN-based compound semiconductor light emitting element in which a light produced just beneath the p-electrode 6 is shielded by the p-electrode 6.