BANK CONTROL CIRCUIT OF RAM BUS DRAM AND SEMICONDUCTOR MEMORY UTILIZING THIS CIRCUIT

PROBLEM TO BE SOLVED: To provide a bank control circuit if a RAM bus DRAM in which circuit area can be reduced by sharing one bank per two bank in a control circuit controlling respective memory bank and an address latch circuit. SOLUTION: A semiconductor memory element performing dependent bank ope...

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Hauptverfasser: CHO DAIKO, KIM KYUNG DUK
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creator CHO DAIKO
KIM KYUNG DUK
description PROBLEM TO BE SOLVED: To provide a bank control circuit if a RAM bus DRAM in which circuit area can be reduced by sharing one bank per two bank in a control circuit controlling respective memory bank and an address latch circuit. SOLUTION: A semiconductor memory element performing dependent bank operation is provided with a plurality of banks 130 comprising memory cells, and a plurality of address latch circuits 170 which is shared by two banks being adjacent respectively out of a plurality of banks, receiving a global address signal, and latching a local address signal of a selected bank.
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SOLUTION: A semiconductor memory element performing dependent bank operation is provided with a plurality of banks 130 comprising memory cells, and a plurality of address latch circuits 170&lt;n/2&gt; which is shared by two banks being adjacent respectively out of a plurality of banks, receiving a global address signal, and latching a local address signal of a selected bank.</description><edition>7</edition><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20021220&amp;DB=EPODOC&amp;CC=JP&amp;NR=2002367375A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20021220&amp;DB=EPODOC&amp;CC=JP&amp;NR=2002367375A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHO DAIKO</creatorcontrib><creatorcontrib>KIM KYUNG DUK</creatorcontrib><title>BANK CONTROL CIRCUIT OF RAM BUS DRAM AND SEMICONDUCTOR MEMORY UTILIZING THIS CIRCUIT</title><description>PROBLEM TO BE SOLVED: To provide a bank control circuit if a RAM bus DRAM in which circuit area can be reduced by sharing one bank per two bank in a control circuit controlling respective memory bank and an address latch circuit. 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SOLUTION: A semiconductor memory element performing dependent bank operation is provided with a plurality of banks 130 comprising memory cells, and a plurality of address latch circuits 170&lt;n/2&gt; which is shared by two banks being adjacent respectively out of a plurality of banks, receiving a global address signal, and latching a local address signal of a selected bank.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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STATIC STORES
title BANK CONTROL CIRCUIT OF RAM BUS DRAM AND SEMICONDUCTOR MEMORY UTILIZING THIS CIRCUIT
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