BANK CONTROL CIRCUIT OF RAM BUS DRAM AND SEMICONDUCTOR MEMORY UTILIZING THIS CIRCUIT
PROBLEM TO BE SOLVED: To provide a bank control circuit if a RAM bus DRAM in which circuit area can be reduced by sharing one bank per two bank in a control circuit controlling respective memory bank and an address latch circuit. SOLUTION: A semiconductor memory element performing dependent bank ope...
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creator | CHO DAIKO KIM KYUNG DUK |
description | PROBLEM TO BE SOLVED: To provide a bank control circuit if a RAM bus DRAM in which circuit area can be reduced by sharing one bank per two bank in a control circuit controlling respective memory bank and an address latch circuit. SOLUTION: A semiconductor memory element performing dependent bank operation is provided with a plurality of banks 130 comprising memory cells, and a plurality of address latch circuits 170 which is shared by two banks being adjacent respectively out of a plurality of banks, receiving a global address signal, and latching a local address signal of a selected bank. |
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SOLUTION: A semiconductor memory element performing dependent bank operation is provided with a plurality of banks 130 comprising memory cells, and a plurality of address latch circuits 170<n/2> which is shared by two banks being adjacent respectively out of a plurality of banks, receiving a global address signal, and latching a local address signal of a selected bank.</description><edition>7</edition><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021220&DB=EPODOC&CC=JP&NR=2002367375A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021220&DB=EPODOC&CC=JP&NR=2002367375A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHO DAIKO</creatorcontrib><creatorcontrib>KIM KYUNG DUK</creatorcontrib><title>BANK CONTROL CIRCUIT OF RAM BUS DRAM AND SEMICONDUCTOR MEMORY UTILIZING THIS CIRCUIT</title><description>PROBLEM TO BE SOLVED: To provide a bank control circuit if a RAM bus DRAM in which circuit area can be reduced by sharing one bank per two bank in a control circuit controlling respective memory bank and an address latch circuit. SOLUTION: A semiconductor memory element performing dependent bank operation is provided with a plurality of banks 130 comprising memory cells, and a plurality of address latch circuits 170<n/2> which is shared by two banks being adjacent respectively out of a plurality of banks, receiving a global address signal, and latching a local address signal of a selected bank.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAhxcvTzVnD29wsJ8vdRcPYMcg71DFHwd1MIcvRVcAoNVnABMRz9XBSCXX09gepcQp1D_IMUfF19_YMiFUJDPH08ozz93BVCPDyDYfp5GFjTEnOKU3mhNDeDkptriLOHbmpBfnxqcUFicmpeakm8V4CRgYGRsZm5sbmpozFRigCCKDCd</recordid><startdate>20021220</startdate><enddate>20021220</enddate><creator>CHO DAIKO</creator><creator>KIM KYUNG DUK</creator><scope>EVB</scope></search><sort><creationdate>20021220</creationdate><title>BANK CONTROL CIRCUIT OF RAM BUS DRAM AND SEMICONDUCTOR MEMORY UTILIZING THIS CIRCUIT</title><author>CHO DAIKO ; KIM KYUNG DUK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2002367375A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHO DAIKO</creatorcontrib><creatorcontrib>KIM KYUNG DUK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHO DAIKO</au><au>KIM KYUNG DUK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BANK CONTROL CIRCUIT OF RAM BUS DRAM AND SEMICONDUCTOR MEMORY UTILIZING THIS CIRCUIT</title><date>2002-12-20</date><risdate>2002</risdate><abstract>PROBLEM TO BE SOLVED: To provide a bank control circuit if a RAM bus DRAM in which circuit area can be reduced by sharing one bank per two bank in a control circuit controlling respective memory bank and an address latch circuit. SOLUTION: A semiconductor memory element performing dependent bank operation is provided with a plurality of banks 130 comprising memory cells, and a plurality of address latch circuits 170<n/2> which is shared by two banks being adjacent respectively out of a plurality of banks, receiving a global address signal, and latching a local address signal of a selected bank.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | BANK CONTROL CIRCUIT OF RAM BUS DRAM AND SEMICONDUCTOR MEMORY UTILIZING THIS CIRCUIT |
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