METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To overcome such a problem that the footprint increases and the maintenance cost increases as the size of a substrate increases because a channel doping device is employed for adding an impurity element to a channel part, and the problem that the crystal structure is broken whe...

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Bibliographische Detailangaben
Hauptverfasser:	ICHIJO MITSUHIRO, SAITO HIDEO, ASAMI TAKEOMI
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To overcome such a problem that the footprint increases and the maintenance cost increases as the size of a substrate increases because a channel doping device is employed for adding an impurity element to a channel part, and the problem that the crystal structure is broken when a crystalline semicon ductor film is subjected to doping. SOLUTION: Plasma is generated in a reaction chamber having an electrode using Ni and B as a material and an amorphous semiconductor film is exposed to the plasma thus adding a catalytic element for accelerating crystallization and an impurity element for imparting p-type required for attaining a desired threshold to the amorphous semiconductor film.