COPPER GATE BY DUAL DAMASCENE METHOD AND INTERCONNECTION THEREOF

PROBLEM TO BE SOLVED: To provide a low-cost manufacturing technique of a metal gate wherein the metal gate and the interconnection thereof of a semiconductor device are formed in a single processing. SOLUTION: The manufacturing method of a semiconductor device includes a process for preparing its si...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SHIEN TEN SUU, EVANS DAVID RUSSELL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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