METHOD OF MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To separate a group III nitride compound semiconductor light-emitting element, to form an electrode and to manufacture an end face reflection mirror, without using etching technology for a group III nitride compound semiconductor the etching of which is difficult. SOLUTION: The manufacturing method of the group III nitride compound semiconductor light-emitting element includes a first process for forming a dielectric film on a SiC substrate or the group III nitride compound semiconductor in a pattern shape and a second process for causing the group III nitride semiconductor layer to selectively grow on the SiC substrate or the group III nitride compound semiconductor by an organic metal chemical vapor growth method, after a reactor is substituted for hydrogen atmosphere.