METHOD FOR FORMING SILICON-GERMANIUM FILM

PROBLEM TO BE SOLVED: To provide the forming method of a silicon-germanium(SiGe) film, which reduces the surface roughness of the silicon-germanium(SiGe) film and can improve the set up of gate structure and an electric characteristic. SOLUTION: The method includes a step for fixing a semiconductor...

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Bibliographische Detailangaben
1. Verfasser:	TEI YUSEKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide the forming method of a silicon-germanium(SiGe) film, which reduces the surface roughness of the silicon-germanium(SiGe) film and can improve the set up of gate structure and an electric characteristic. SOLUTION: The method includes a step for fixing a semiconductor substrate where a gate oxidized film is formed in a vapor deposition chamber, a step for making SiH4 and H2 flow into the vapor deposition chamber and forming silicon fine particles on the surface of the gate oxidized film by using a plasma system, and a step for making SiH4 , GeH4 and H2 flow into the vapor deposition chamber and vapor-depositing silicon germanium with the multiple silicon fine particles as a center.