PLASMA RESISTANT MEMBER
PROBLEM TO BE SOLVED: To provide a plasma resistant member which sufficiently withstands even when exposed to plasma, and whose cost is reduced. SOLUTION: In the plasma resistant member, at least the surface region to be exposed to plasma in a corrosive gas is formed of a metallic layer belonging to...
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| creator | SAITO SHUICHI ICHIJIMA MASAHIKO |
| description | PROBLEM TO BE SOLVED: To provide a plasma resistant member which sufficiently withstands even when exposed to plasma, and whose cost is reduced. SOLUTION: In the plasma resistant member, at least the surface region to be exposed to plasma in a corrosive gas is formed of a metallic layer belonging to the group IIIA in the Periodic Table. The metal of the group IIIA in the Periodic Table consists of at least one kind selected from Y, La, Ce, Nd, Sm, Eu, Gd, Dy, Ho, Er or the like. Further, the thickness of the metallic layer is preferably controlled to about 10 to 200 μm. |
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SOLUTION: In the plasma resistant member, at least the surface region to be exposed to plasma in a corrosive gas is formed of a metallic layer belonging to the group IIIA in the Periodic Table. The metal of the group IIIA in the Periodic Table consists of at least one kind selected from Y, La, Ce, Nd, Sm, Eu, Gd, Dy, Ho, Er or the like. Further, the thickness of the metallic layer is preferably controlled to about 10 to 200 μm.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020828&DB=EPODOC&CC=JP&NR=2002241971A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020828&DB=EPODOC&CC=JP&NR=2002241971A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAITO SHUICHI</creatorcontrib><creatorcontrib>ICHIJIMA MASAHIKO</creatorcontrib><title>PLASMA RESISTANT MEMBER</title><description>PROBLEM TO BE SOLVED: To provide a plasma resistant member which sufficiently withstands even when exposed to plasma, and whose cost is reduced. SOLUTION: In the plasma resistant member, at least the surface region to be exposed to plasma in a corrosive gas is formed of a metallic layer belonging to the group IIIA in the Periodic Table. The metal of the group IIIA in the Periodic Table consists of at least one kind selected from Y, La, Ce, Nd, Sm, Eu, Gd, Dy, Ho, Er or the like. Further, the thickness of the metallic layer is preferably controlled to about 10 to 200 μm.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAP8HEM9nVUCHIN9gwOcfQLUfB19XVyDeJhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBkZGJoaW5oaOxkQpAgAUMB_d</recordid><startdate>20020828</startdate><enddate>20020828</enddate><creator>SAITO SHUICHI</creator><creator>ICHIJIMA MASAHIKO</creator><scope>EVB</scope></search><sort><creationdate>20020828</creationdate><title>PLASMA RESISTANT MEMBER</title><author>SAITO SHUICHI ; ICHIJIMA MASAHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2002241971A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SAITO SHUICHI</creatorcontrib><creatorcontrib>ICHIJIMA MASAHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SAITO SHUICHI</au><au>ICHIJIMA MASAHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA RESISTANT MEMBER</title><date>2002-08-28</date><risdate>2002</risdate><abstract>PROBLEM TO BE SOLVED: To provide a plasma resistant member which sufficiently withstands even when exposed to plasma, and whose cost is reduced. SOLUTION: In the plasma resistant member, at least the surface region to be exposed to plasma in a corrosive gas is formed of a metallic layer belonging to the group IIIA in the Periodic Table. The metal of the group IIIA in the Periodic Table consists of at least one kind selected from Y, La, Ce, Nd, Sm, Eu, Gd, Dy, Ho, Er or the like. Further, the thickness of the metallic layer is preferably controlled to about 10 to 200 μm.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | PLASMA RESISTANT MEMBER |
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