SEMICONDUCTOR MEMORY

SEMICONDUCTOR MEMORY

PROBLEM TO BE SOLVED: To reduce the layout area of a sense amplifier circuit for reading internal data. SOLUTION: In the constitution of a electric charge confinement type sense amplifier, the activation/non-activation of a gate (RG#) for confinement of electric charges and a sense amplifier circuit...

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Bibliographische Detailangaben
1. Verfasser: AMANO TERUHIKO
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Zusammenfassung:PROBLEM TO BE SOLVED: To reduce the layout area of a sense amplifier circuit for reading internal data. SOLUTION: In the constitution of a electric charge confinement type sense amplifier, the activation/non-activation of a gate (RG#) for confinement of electric charges and a sense amplifier circuit (1b) are controlled by separate control signals (/CSLR#, SAE), respectively.