SEMICONDUCTOR MANUFACTURING EQUIPMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing equipment which enables application of even a small amount of resist on the entire surface of a substrate, even if the resist has a high viscosity or the substrate has a poor wettability, and also to provide a method of manufacturing a s...

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Bibliographische Detailangaben
1. Verfasser:	ITO YOSHIZUMI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPARATUS SPECIALLY ADAPTED THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing equipment which enables application of even a small amount of resist on the entire surface of a substrate, even if the resist has a high viscosity or the substrate has a poor wettability, and also to provide a method of manufacturing a semiconductor device. SOLUTION: A wafer 1 is held on the upper surface of a chuck 13, and the chuck 13 is connected to a spin motor 15, motor pedestal 17, and air cylinder shaft 19. The spin motor 15 can be rotates about the vertical axis, and the air cylinder shaft 19 can be moved vertically. When the resist 5 is dropped on the wafer 1, the spin motor 15 is turned, and at the same time, air is supplied to an air cylinder 21 to move the air cylinder shaft 19 in the upward direction. The chuck 13 is moved upward, being rotated by these movements. The resist 5 is expanded on the surface of the wafer 1, while being pressed against the wafer 1, to be applied on the entire surface of the wafer 1.