METHOD FOR MANUFACTURING INTERMETALLIC DIELECTRIC LAYER USING LOW-BIAS RF POWER IN DEPOSITION OF FSG BY HIGH- DENSITY PLASMA

PROBLEM TO BE SOLVED: To provide a method for manufacturing an intermetallic dielectric layer, using low-bias RF power in the deposition of an FSG(fluorinated silicate glass) by a high-density plasma, wherein the load on an operator is not increased, the use and the arrangement of an apparatus are reduced, production speed is increased and a deposition step is reduced, as well as the generation of a gap and the generation of an interface can be reduced. SOLUTION: The FSG is deposited and filled into an intermetallic gap by RF power with a bias at a comparatively slow deposition rate. In addition, the FSG is deposited at a comparatively fast deposition rate by RF power, without bias or with comparatively small bias. A sacrificial layer is formed and is planarized and treated with CMP.