SEMICONDUCTOR ELEMENT AND FORMING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor element together with its forming method wherein a gate electrode conductive layer is formed as a damascene structure in a recessed active region between field oxide films. SOLUTION: The gate electrode conductive layer is formed in the active region while it is not formed in a non-active region. So, when an inter-layer insulating film is vapor-deposited in a succeeding process, a void is suppressed from occurring in the inter-layer insulating film, as the inter-layer insulating film being thin. The effects of micro scratch, pitting, and stringer occurring on the bottom surface of the active region are minimized since a polysilicon film is grown again by SEG on the bottom of the active region.