METHOD FOR MANUFACTURING CONDUCTING CONNECTION

METHOD FOR MANUFACTURING CONDUCTING CONNECTION

PROBLEM TO BE SOLVED: To provide a method for manufacturing a conducting connection which permits the number of processes to be held as small as possible, or rather to be reduced, without such problems as overetching of trenches and dielectric close-off. SOLUTION: A semiconductor substrate having at...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: WEINRICH VOLKER, SCHINDLER GUENTHER DR, SCHNABEL RAINER FLORIAN, HASLER BARBARA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator WEINRICH VOLKER
SCHINDLER GUENTHER DR
SCHNABEL RAINER FLORIAN
HASLER BARBARA
description PROBLEM TO BE SOLVED: To provide a method for manufacturing a conducting connection which permits the number of processes to be held as small as possible, or rather to be reduced, without such problems as overetching of trenches and dielectric close-off. SOLUTION: A semiconductor substrate having at least one insulation layer is prepared. A mask is formed on the upper face of the insulation layer, and then an isotropic etching process is mainly conducted, and then an anisotropic etching is mainly conducted until reaching the lower face of the insulation film and thereby forming a contact hole. Then, the mask is removed and the contact hole is filled with a first conductive material. The first conductive material is etched back to a specified depth, and then a free region of the contact hole is filled with at least one kind of second conductive material.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2002141412A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2002141412A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2002141412A3</originalsourceid><addsrcrecordid>eNrjZNDzdQ3x8HdRcPMPUvB19At1c3QOCQ3y9HNXcPb3cwl1DoEy_VyBTH8_HgbWtMSc4lReKM3NoOTmGuLsoZtakB-fWlyQmJyal1oS7xVgZGBgZGgChEaOxkQpAgA_gCZF</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR MANUFACTURING CONDUCTING CONNECTION</title><source>esp@cenet</source><creator>WEINRICH VOLKER ; SCHINDLER GUENTHER DR ; SCHNABEL RAINER FLORIAN ; HASLER BARBARA</creator><creatorcontrib>WEINRICH VOLKER ; SCHINDLER GUENTHER DR ; SCHNABEL RAINER FLORIAN ; HASLER BARBARA</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method for manufacturing a conducting connection which permits the number of processes to be held as small as possible, or rather to be reduced, without such problems as overetching of trenches and dielectric close-off. SOLUTION: A semiconductor substrate having at least one insulation layer is prepared. A mask is formed on the upper face of the insulation layer, and then an isotropic etching process is mainly conducted, and then an anisotropic etching is mainly conducted until reaching the lower face of the insulation film and thereby forming a contact hole. Then, the mask is removed and the contact hole is filled with a first conductive material. The first conductive material is etched back to a specified depth, and then a free region of the contact hole is filled with at least one kind of second conductive material.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020517&amp;DB=EPODOC&amp;CC=JP&amp;NR=2002141412A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020517&amp;DB=EPODOC&amp;CC=JP&amp;NR=2002141412A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WEINRICH VOLKER</creatorcontrib><creatorcontrib>SCHINDLER GUENTHER DR</creatorcontrib><creatorcontrib>SCHNABEL RAINER FLORIAN</creatorcontrib><creatorcontrib>HASLER BARBARA</creatorcontrib><title>METHOD FOR MANUFACTURING CONDUCTING CONNECTION</title><description>PROBLEM TO BE SOLVED: To provide a method for manufacturing a conducting connection which permits the number of processes to be held as small as possible, or rather to be reduced, without such problems as overetching of trenches and dielectric close-off. SOLUTION: A semiconductor substrate having at least one insulation layer is prepared. A mask is formed on the upper face of the insulation layer, and then an isotropic etching process is mainly conducted, and then an anisotropic etching is mainly conducted until reaching the lower face of the insulation film and thereby forming a contact hole. Then, the mask is removed and the contact hole is filled with a first conductive material. The first conductive material is etched back to a specified depth, and then a free region of the contact hole is filled with at least one kind of second conductive material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDzdQ3x8HdRcPMPUvB19At1c3QOCQ3y9HNXcPb3cwl1DoEy_VyBTH8_HgbWtMSc4lReKM3NoOTmGuLsoZtakB-fWlyQmJyal1oS7xVgZGBgZGgChEaOxkQpAgA_gCZF</recordid><startdate>20020517</startdate><enddate>20020517</enddate><creator>WEINRICH VOLKER</creator><creator>SCHINDLER GUENTHER DR</creator><creator>SCHNABEL RAINER FLORIAN</creator><creator>HASLER BARBARA</creator><scope>EVB</scope></search><sort><creationdate>20020517</creationdate><title>METHOD FOR MANUFACTURING CONDUCTING CONNECTION</title><author>WEINRICH VOLKER ; SCHINDLER GUENTHER DR ; SCHNABEL RAINER FLORIAN ; HASLER BARBARA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2002141412A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WEINRICH VOLKER</creatorcontrib><creatorcontrib>SCHINDLER GUENTHER DR</creatorcontrib><creatorcontrib>SCHNABEL RAINER FLORIAN</creatorcontrib><creatorcontrib>HASLER BARBARA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WEINRICH VOLKER</au><au>SCHINDLER GUENTHER DR</au><au>SCHNABEL RAINER FLORIAN</au><au>HASLER BARBARA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MANUFACTURING CONDUCTING CONNECTION</title><date>2002-05-17</date><risdate>2002</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method for manufacturing a conducting connection which permits the number of processes to be held as small as possible, or rather to be reduced, without such problems as overetching of trenches and dielectric close-off. SOLUTION: A semiconductor substrate having at least one insulation layer is prepared. A mask is formed on the upper face of the insulation layer, and then an isotropic etching process is mainly conducted, and then an anisotropic etching is mainly conducted until reaching the lower face of the insulation film and thereby forming a contact hole. Then, the mask is removed and the contact hole is filled with a first conductive material. The first conductive material is etched back to a specified depth, and then a free region of the contact hole is filled with at least one kind of second conductive material.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2002141412A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR MANUFACTURING CONDUCTING CONNECTION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T09%3A03%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WEINRICH%20VOLKER&rft.date=2002-05-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2002141412A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true