MANUFACTURING METHOD OF METAL THIN FILM CONSISTING OF LARGE SINGLE CRYSTAL GRAIN
PROBLEM TO BE SOLVED: To provide a manufacturing method of a metal thin film consisting of large single crystal grains, in which the ratio of the thickness of the thin film to the grain size exceeds 50, independently from the kind of a substrate or a specific vapor deposition process. SOLUTION: This...
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| creator | SEUNG HYUN KIM U KENEN KA CHOYU BOKU TOEN LEE TOSHU IN GISHUN |
| description | PROBLEM TO BE SOLVED: To provide a manufacturing method of a metal thin film consisting of large single crystal grains, in which the ratio of the thickness of the thin film to the grain size exceeds 50, independently from the kind of a substrate or a specific vapor deposition process. SOLUTION: This manufacturing method of the metal thin film consisting of single crystalline large grains comprises a first step of performing the vapor deposition of the metal thin film on the substrate 200 in the atmosphere in which predetermined additive gas component is contained in argon being an inert gas in order to change the surface energy, the intergranular energy or the internal stress energy of the metal thin film 201 to be vapor-deposited on the substrate 200, and a second step of performing the heat treatment of the product in the first step at temperature suitable for the grain growth of the metal thin film containing the additive gas component. A thermally oxidized film 204 can be interposed on a substrate 203 as an intermediate layer. |
| format | Patent |
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SOLUTION: This manufacturing method of the metal thin film consisting of single crystalline large grains comprises a first step of performing the vapor deposition of the metal thin film on the substrate 200 in the atmosphere in which predetermined additive gas component is contained in argon being an inert gas in order to change the surface energy, the intergranular energy or the internal stress energy of the metal thin film 201 to be vapor-deposited on the substrate 200, and a second step of performing the heat treatment of the product in the first step at temperature suitable for the grain growth of the metal thin film containing the additive gas component. A thermally oxidized film 204 can be interposed on a substrate 203 as an intermediate layer.</description><edition>7</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020419&DB=EPODOC&CC=JP&NR=2002115056A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020419&DB=EPODOC&CC=JP&NR=2002115056A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SEUNG HYUN KIM</creatorcontrib><creatorcontrib>U KENEN</creatorcontrib><creatorcontrib>KA CHOYU</creatorcontrib><creatorcontrib>BOKU TOEN</creatorcontrib><creatorcontrib>LEE TOSHU</creatorcontrib><creatorcontrib>IN GISHUN</creatorcontrib><title>MANUFACTURING METHOD OF METAL THIN FILM CONSISTING OF LARGE SINGLE CRYSTAL GRAIN</title><description>PROBLEM TO BE SOLVED: To provide a manufacturing method of a metal thin film consisting of large single crystal grains, in which the ratio of the thickness of the thin film to the grain size exceeds 50, independently from the kind of a substrate or a specific vapor deposition process. SOLUTION: This manufacturing method of the metal thin film consisting of single crystalline large grains comprises a first step of performing the vapor deposition of the metal thin film on the substrate 200 in the atmosphere in which predetermined additive gas component is contained in argon being an inert gas in order to change the surface energy, the intergranular energy or the internal stress energy of the metal thin film 201 to be vapor-deposited on the substrate 200, and a second step of performing the heat treatment of the product in the first step at temperature suitable for the grain growth of the metal thin film containing the additive gas component. A thermally oxidized film 204 can be interposed on a substrate 203 as an intermediate layer.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAjwdfQLdXN0DgkN8vRzV_B1DfHwd1HwdwOxHH0UQjw8_RTcPH18FZz9_YI9g0NAioCyPo5B7q4KwUCej6uCc1BkMEixe5Cjpx8PA2taYk5xKi-U5mZQcnMNcfbQTS3Ij08tLkhMTs1LLYn3CjAyMDAyNDQ1MDVzNCZKEQC_pS9F</recordid><startdate>20020419</startdate><enddate>20020419</enddate><creator>SEUNG HYUN KIM</creator><creator>U KENEN</creator><creator>KA CHOYU</creator><creator>BOKU TOEN</creator><creator>LEE TOSHU</creator><creator>IN GISHUN</creator><scope>EVB</scope></search><sort><creationdate>20020419</creationdate><title>MANUFACTURING METHOD OF METAL THIN FILM CONSISTING OF LARGE SINGLE CRYSTAL GRAIN</title><author>SEUNG HYUN KIM ; U KENEN ; KA CHOYU ; BOKU TOEN ; LEE TOSHU ; IN GISHUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2002115056A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SEUNG HYUN KIM</creatorcontrib><creatorcontrib>U KENEN</creatorcontrib><creatorcontrib>KA CHOYU</creatorcontrib><creatorcontrib>BOKU TOEN</creatorcontrib><creatorcontrib>LEE TOSHU</creatorcontrib><creatorcontrib>IN GISHUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SEUNG HYUN KIM</au><au>U KENEN</au><au>KA CHOYU</au><au>BOKU TOEN</au><au>LEE TOSHU</au><au>IN GISHUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHOD OF METAL THIN FILM CONSISTING OF LARGE SINGLE CRYSTAL GRAIN</title><date>2002-04-19</date><risdate>2002</risdate><abstract>PROBLEM TO BE SOLVED: To provide a manufacturing method of a metal thin film consisting of large single crystal grains, in which the ratio of the thickness of the thin film to the grain size exceeds 50, independently from the kind of a substrate or a specific vapor deposition process. SOLUTION: This manufacturing method of the metal thin film consisting of single crystalline large grains comprises a first step of performing the vapor deposition of the metal thin film on the substrate 200 in the atmosphere in which predetermined additive gas component is contained in argon being an inert gas in order to change the surface energy, the intergranular energy or the internal stress energy of the metal thin film 201 to be vapor-deposited on the substrate 200, and a second step of performing the heat treatment of the product in the first step at temperature suitable for the grain growth of the metal thin film containing the additive gas component. A thermally oxidized film 204 can be interposed on a substrate 203 as an intermediate layer.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | MANUFACTURING METHOD OF METAL THIN FILM CONSISTING OF LARGE SINGLE CRYSTAL GRAIN |
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