GAS LINE SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS

PROBLEM TO BE SOLVED: To give a gas line system which realizes a low cost and a small foot print. SOLUTION: The gas line system for use in a semiconductor manufacturing apparatus having at least two reactors is composed of a flow divider means composed of at least one gas source, a primary inlet por...

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Hauptverfasser: YAMAGISHI TAKAYUKI, SUWADA MASAE
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creator YAMAGISHI TAKAYUKI
SUWADA MASAE
description PROBLEM TO BE SOLVED: To give a gas line system which realizes a low cost and a small foot print. SOLUTION: The gas line system for use in a semiconductor manufacturing apparatus having at least two reactors is composed of a flow divider means composed of at least one gas source, a primary inlet port for receiving a source gas from the gas source and a secondary outlet port for equally dividing and outputting the inputted gas source. The primary inlet port is connected to the gas source and the secondary outlet port is composed of a flow divider means connected to the reactors and one exhaust pump connected to the reactors for exhausting the gas from the reactors. The system preferably comprises APCs provided between the reactors and the exhaust pump for controlling the pressure every reactor.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2002110570A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2002110570A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2002110570A3</originalsourceid><addsrcrecordid>eNrjZLB0dwxW8PH0c1UIjgwOcfVVcPMPUgh29fV09vdzCXUOAfJ8Hf1C3RydQ0KDPP3cFRwDAhyDHENCg3kYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBgZGhoYGpuYGjMVGKAPqWKWs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GAS LINE SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS</title><source>esp@cenet</source><creator>YAMAGISHI TAKAYUKI ; SUWADA MASAE</creator><creatorcontrib>YAMAGISHI TAKAYUKI ; SUWADA MASAE</creatorcontrib><description>PROBLEM TO BE SOLVED: To give a gas line system which realizes a low cost and a small foot print. SOLUTION: The gas line system for use in a semiconductor manufacturing apparatus having at least two reactors is composed of a flow divider means composed of at least one gas source, a primary inlet port for receiving a source gas from the gas source and a secondary outlet port for equally dividing and outputting the inputted gas source. The primary inlet port is connected to the gas source and the secondary outlet port is composed of a flow divider means connected to the reactors and one exhaust pump connected to the reactors for exhausting the gas from the reactors. The system preferably comprises APCs provided between the reactors and the exhaust pump for controlling the pressure every reactor.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CONTROLLING ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PHYSICS ; REGULATING ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020412&amp;DB=EPODOC&amp;CC=JP&amp;NR=2002110570A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020412&amp;DB=EPODOC&amp;CC=JP&amp;NR=2002110570A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAGISHI TAKAYUKI</creatorcontrib><creatorcontrib>SUWADA MASAE</creatorcontrib><title>GAS LINE SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS</title><description>PROBLEM TO BE SOLVED: To give a gas line system which realizes a low cost and a small foot print. SOLUTION: The gas line system for use in a semiconductor manufacturing apparatus having at least two reactors is composed of a flow divider means composed of at least one gas source, a primary inlet port for receiving a source gas from the gas source and a secondary outlet port for equally dividing and outputting the inputted gas source. The primary inlet port is connected to the gas source and the secondary outlet port is composed of a flow divider means connected to the reactors and one exhaust pump connected to the reactors for exhausting the gas from the reactors. The system preferably comprises APCs provided between the reactors and the exhaust pump for controlling the pressure every reactor.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CONTROLLING</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>REGULATING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB0dwxW8PH0c1UIjgwOcfVVcPMPUgh29fV09vdzCXUOAfJ8Hf1C3RydQ0KDPP3cFRwDAhyDHENCg3kYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBgZGhoYGpuYGjMVGKAPqWKWs</recordid><startdate>20020412</startdate><enddate>20020412</enddate><creator>YAMAGISHI TAKAYUKI</creator><creator>SUWADA MASAE</creator><scope>EVB</scope></search><sort><creationdate>20020412</creationdate><title>GAS LINE SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS</title><author>YAMAGISHI TAKAYUKI ; SUWADA MASAE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2002110570A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CONTROLLING</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>REGULATING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAGISHI TAKAYUKI</creatorcontrib><creatorcontrib>SUWADA MASAE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAGISHI TAKAYUKI</au><au>SUWADA MASAE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GAS LINE SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS</title><date>2002-04-12</date><risdate>2002</risdate><abstract>PROBLEM TO BE SOLVED: To give a gas line system which realizes a low cost and a small foot print. SOLUTION: The gas line system for use in a semiconductor manufacturing apparatus having at least two reactors is composed of a flow divider means composed of at least one gas source, a primary inlet port for receiving a source gas from the gas source and a secondary outlet port for equally dividing and outputting the inputted gas source. The primary inlet port is connected to the gas source and the secondary outlet port is composed of a flow divider means connected to the reactors and one exhaust pump connected to the reactors for exhausting the gas from the reactors. The system preferably comprises APCs provided between the reactors and the exhaust pump for controlling the pressure every reactor.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
CONTROLLING
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PHYSICS
REGULATING
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
title GAS LINE SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS
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