MICROELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a method capable of etching a contact hole, after coating an effective hydrogen barrier using a simple method, and to provide a microelectronic constituent member. SOLUTION: A method for manufacturing the microelectronic constituent member comprises the steps of form...
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creator | SCHINDLER GUENTHER DR HARTNER WALTER GABRIC ZVONIMIR |
description | PROBLEM TO BE SOLVED: To provide a method capable of etching a contact hole, after coating an effective hydrogen barrier using a simple method, and to provide a microelectronic constituent member. SOLUTION: A method for manufacturing the microelectronic constituent member comprises the steps of forming a memory capacitor (3) containing a first electrode (31), a second electrode (32) and a ferroelectric or paraelectric dielectric (33) between the electrodes (31, 32) on a substrate (1); first, forming a silicon oxide (41) in the case of forming a barrier (4) to form the barrier (4) for protecting against infiltration of hydrogen onto the capacitor (3); annealing at least a part of the capacitor (3) and the silicon oxide (41); and coating the barrier layer (42) for protecting against the infiltration of hydrogen on the annealed silicon oxide layer (41). The microelectronic constituent member manufactured by the method is provided. |
format | Patent |
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SOLUTION: A method for manufacturing the microelectronic constituent member comprises the steps of forming a memory capacitor (3) containing a first electrode (31), a second electrode (32) and a ferroelectric or paraelectric dielectric (33) between the electrodes (31, 32) on a substrate (1); first, forming a silicon oxide (41) in the case of forming a barrier (4) to form the barrier (4) for protecting against infiltration of hydrogen onto the capacitor (3); annealing at least a part of the capacitor (3) and the silicon oxide (41); and coating the barrier layer (42) for protecting against the infiltration of hydrogen on the annealed silicon oxide layer (41). The microelectronic constituent member manufactured by the method is provided.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020315&DB=EPODOC&CC=JP&NR=2002076296A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020315&DB=EPODOC&CC=JP&NR=2002076296A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SCHINDLER GUENTHER DR</creatorcontrib><creatorcontrib>HARTNER WALTER</creatorcontrib><creatorcontrib>GABRIC ZVONIMIR</creatorcontrib><title>MICROELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME</title><description>PROBLEM TO BE SOLVED: To provide a method capable of etching a contact hole, after coating an effective hydrogen barrier using a simple method, and to provide a microelectronic constituent member. SOLUTION: A method for manufacturing the microelectronic constituent member comprises the steps of forming a memory capacitor (3) containing a first electrode (31), a second electrode (32) and a ferroelectric or paraelectric dielectric (33) between the electrodes (31, 32) on a substrate (1); first, forming a silicon oxide (41) in the case of forming a barrier (4) to form the barrier (4) for protecting against infiltration of hydrogen onto the capacitor (3); annealing at least a part of the capacitor (3) and the silicon oxide (41); and coating the barrier layer (42) for protecting against the infiltration of hydrogen on the annealed silicon oxide layer (41). 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SOLUTION: A method for manufacturing the microelectronic constituent member comprises the steps of forming a memory capacitor (3) containing a first electrode (31), a second electrode (32) and a ferroelectric or paraelectric dielectric (33) between the electrodes (31, 32) on a substrate (1); first, forming a silicon oxide (41) in the case of forming a barrier (4) to form the barrier (4) for protecting against infiltration of hydrogen onto the capacitor (3); annealing at least a part of the capacitor (3) and the silicon oxide (41); and coating the barrier layer (42) for protecting against the infiltration of hydrogen on the annealed silicon oxide layer (41). The microelectronic constituent member manufactured by the method is provided.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | MICROELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME |
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