APPARATUS FOR GROWING SINGLE CRYSTAL
PROBLEM TO BE SOLVED: To stably grow a single crystal rod without damaging the crystal habit line of the single crystal rod, causing deformation and delamination due to the weight of the rod, even when it is as heavy as 400 kg and causing dislocation due to the damage of the crystal habit line in a...
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| creator | YAMAGISHI HIROTOSHI |
| description | PROBLEM TO BE SOLVED: To stably grow a single crystal rod without damaging the crystal habit line of the single crystal rod, causing deformation and delamination due to the weight of the rod, even when it is as heavy as 400 kg and causing dislocation due to the damage of the crystal habit line in a constitution where the bottom of the bulged portion of the single crystal rod formed by CZ method is supported. SOLUTION: Contact members 9A and 9B whose surface hardness is not less than 70 in terms of Shore hardness and not more than 100 in terms of Vickers harness and total tensile strength of not less than 120 MPa and not more than 250 MPa are arranged at the contact area of the crystal and the support members 8A and 8B which supports the bottom of the bulged portion 4 of the single crystal formed underneath the seed crystal. |
| format | Patent |
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SOLUTION: Contact members 9A and 9B whose surface hardness is not less than 70 in terms of Shore hardness and not more than 100 in terms of Vickers harness and total tensile strength of not less than 120 MPa and not more than 250 MPa are arranged at the contact area of the crystal and the support members 8A and 8B which supports the bottom of the bulged portion 4 of the single crystal formed underneath the seed crystal.</description><edition>7</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020206&DB=EPODOC&CC=JP&NR=2002037693A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020206&DB=EPODOC&CC=JP&NR=2002037693A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAGISHI HIROTOSHI</creatorcontrib><title>APPARATUS FOR GROWING SINGLE CRYSTAL</title><description>PROBLEM TO BE SOLVED: To stably grow a single crystal rod without damaging the crystal habit line of the single crystal rod, causing deformation and delamination due to the weight of the rod, even when it is as heavy as 400 kg and causing dislocation due to the damage of the crystal habit line in a constitution where the bottom of the bulged portion of the single crystal rod formed by CZ method is supported. SOLUTION: Contact members 9A and 9B whose surface hardness is not less than 70 in terms of Shore hardness and not more than 100 in terms of Vickers harness and total tensile strength of not less than 120 MPa and not more than 250 MPa are arranged at the contact area of the crystal and the support members 8A and 8B which supports the bottom of the bulged portion 4 of the single crystal formed underneath the seed crystal.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBxDAhwDHIMCQ1WcPMPUnAP8g_39HNXCAYSPq4KzkGRwSGOPjwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjAwMjA2NzM0tjRmChFANJMI5g</recordid><startdate>20020206</startdate><enddate>20020206</enddate><creator>YAMAGISHI HIROTOSHI</creator><scope>EVB</scope></search><sort><creationdate>20020206</creationdate><title>APPARATUS FOR GROWING SINGLE CRYSTAL</title><author>YAMAGISHI HIROTOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2002037693A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAGISHI HIROTOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAGISHI HIROTOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR GROWING SINGLE CRYSTAL</title><date>2002-02-06</date><risdate>2002</risdate><abstract>PROBLEM TO BE SOLVED: To stably grow a single crystal rod without damaging the crystal habit line of the single crystal rod, causing deformation and delamination due to the weight of the rod, even when it is as heavy as 400 kg and causing dislocation due to the damage of the crystal habit line in a constitution where the bottom of the bulged portion of the single crystal rod formed by CZ method is supported. SOLUTION: Contact members 9A and 9B whose surface hardness is not less than 70 in terms of Shore hardness and not more than 100 in terms of Vickers harness and total tensile strength of not less than 120 MPa and not more than 250 MPa are arranged at the contact area of the crystal and the support members 8A and 8B which supports the bottom of the bulged portion 4 of the single crystal formed underneath the seed crystal.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | APPARATUS FOR GROWING SINGLE CRYSTAL |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T00%3A28%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAMAGISHI%20HIROTOSHI&rft.date=2002-02-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2002037693A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |