METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for keeping each coating interface, constituting a TFT in a clean state which will not be contaminated with contaminating impurities during fabrication process and for adding impurities to a crystalline semiconductor film without causing destruction of cryst...

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Bibliographische Detailangaben
Hauptverfasser:	ICHIJO MITSUHIRO, YAMAZAKI SHUNPEI, MITSUKI TORU, ASAMI TAKEOMI, KANAKUBO YOKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for keeping each coating interface, constituting a TFT in a clean state which will not be contaminated with contaminating impurities during fabrication process and for adding impurities to a crystalline semiconductor film without causing destruction of crystal. SOLUTION: When a semiconductor manufacturing system, having a loader chamber 101, an unloader chamber 102, and a plurality of processing chambers 103-106 for depositing a film, and the like, disposed around a carrying chamber 107 is used, a TFT can be processed without being exposing to the atmosphere between each processing step, and each coating interface constituting the TFT can be kept in clean state. Furthermore, the crystal structure of a crystalline semiconductor film is protected against destruction, causing crystallization after adding impurities an amorphous semiconductor film.