METHOD AND MECHANISM FOR SPUTTERING

PROBLEM TO BE SOLVED: To solve the problem that film thickness increases more than needed and film thickness uniformity between disks in not in a normal rage when number of times that a disk mounted on a rotary body passes over target is increased as a means for adjusting film thickness correspondin...

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Hauptverfasser: KITAI TAKAHIRO, SUEMITSU TOSHIYUKI
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creator KITAI TAKAHIRO
SUEMITSU TOSHIYUKI
description PROBLEM TO BE SOLVED: To solve the problem that film thickness increases more than needed and film thickness uniformity between disks in not in a normal rage when number of times that a disk mounted on a rotary body passes over target is increased as a means for adjusting film thickness corresponding to a decrease in filming rate, as to a sputtering device which forms a film on the disk mounted on the rotary body when the disk passes in front of the target plural times. SOLUTION: An integral discharging time and the quantity of a decrease in filming rate which are previously measured and the rotating speed of the rotary body 4 and the value of a decrease in filming rate are inputted to an arithmetic circuit 13 to obtain an integral discharging time when a film is formed on the disk and always monitor it; when the timing where the filming rate of the target 3 begins decrease is detected, the rotating speed of the rotary body 4 is obtained, the rotating speed of a motor 5 which drives the rotary body 4 so that the film thickness becomes constant is computed, and the value is supplied as a new rotating speed command value 9 for the motor 5.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2001307390A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2001307390A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2001307390A3</originalsourceid><addsrcrecordid>eNrjZFD2dQ3x8HdRcPRzUfB1dfZw9PMM9lVw8w9SCA4IDQlxDfL0c-dhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBobGBubGlgaOxkQpAgCWzyMV</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD AND MECHANISM FOR SPUTTERING</title><source>esp@cenet</source><creator>KITAI TAKAHIRO ; SUEMITSU TOSHIYUKI</creator><creatorcontrib>KITAI TAKAHIRO ; SUEMITSU TOSHIYUKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To solve the problem that film thickness increases more than needed and film thickness uniformity between disks in not in a normal rage when number of times that a disk mounted on a rotary body passes over target is increased as a means for adjusting film thickness corresponding to a decrease in filming rate, as to a sputtering device which forms a film on the disk mounted on the rotary body when the disk passes in front of the target plural times. SOLUTION: An integral discharging time and the quantity of a decrease in filming rate which are previously measured and the rotating speed of the rotary body 4 and the value of a decrease in filming rate are inputted to an arithmetic circuit 13 to obtain an integral discharging time when a film is formed on the disk and always monitor it; when the timing where the filming rate of the target 3 begins decrease is detected, the rotating speed of the rotary body 4 is obtained, the rotating speed of a motor 5 which drives the rotary body 4 so that the film thickness becomes constant is computed, and the value is supplied as a new rotating speed command value 9 for the motor 5.</description><edition>7</edition><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PHYSICS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20011102&amp;DB=EPODOC&amp;CC=JP&amp;NR=2001307390A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20011102&amp;DB=EPODOC&amp;CC=JP&amp;NR=2001307390A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KITAI TAKAHIRO</creatorcontrib><creatorcontrib>SUEMITSU TOSHIYUKI</creatorcontrib><title>METHOD AND MECHANISM FOR SPUTTERING</title><description>PROBLEM TO BE SOLVED: To solve the problem that film thickness increases more than needed and film thickness uniformity between disks in not in a normal rage when number of times that a disk mounted on a rotary body passes over target is increased as a means for adjusting film thickness corresponding to a decrease in filming rate, as to a sputtering device which forms a film on the disk mounted on the rotary body when the disk passes in front of the target plural times. SOLUTION: An integral discharging time and the quantity of a decrease in filming rate which are previously measured and the rotating speed of the rotary body 4 and the value of a decrease in filming rate are inputted to an arithmetic circuit 13 to obtain an integral discharging time when a film is formed on the disk and always monitor it; when the timing where the filming rate of the target 3 begins decrease is detected, the rotating speed of the rotary body 4 is obtained, the rotating speed of a motor 5 which drives the rotary body 4 so that the film thickness becomes constant is computed, and the value is supplied as a new rotating speed command value 9 for the motor 5.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2dQ3x8HdRcPRzUfB1dfZw9PMM9lVw8w9SCA4IDQlxDfL0c-dhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBobGBubGlgaOxkQpAgCWzyMV</recordid><startdate>20011102</startdate><enddate>20011102</enddate><creator>KITAI TAKAHIRO</creator><creator>SUEMITSU TOSHIYUKI</creator><scope>EVB</scope></search><sort><creationdate>20011102</creationdate><title>METHOD AND MECHANISM FOR SPUTTERING</title><author>KITAI TAKAHIRO ; SUEMITSU TOSHIYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2001307390A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2001</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KITAI TAKAHIRO</creatorcontrib><creatorcontrib>SUEMITSU TOSHIYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KITAI TAKAHIRO</au><au>SUEMITSU TOSHIYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND MECHANISM FOR SPUTTERING</title><date>2001-11-02</date><risdate>2001</risdate><abstract>PROBLEM TO BE SOLVED: To solve the problem that film thickness increases more than needed and film thickness uniformity between disks in not in a normal rage when number of times that a disk mounted on a rotary body passes over target is increased as a means for adjusting film thickness corresponding to a decrease in filming rate, as to a sputtering device which forms a film on the disk mounted on the rotary body when the disk passes in front of the target plural times. SOLUTION: An integral discharging time and the quantity of a decrease in filming rate which are previously measured and the rotating speed of the rotary body 4 and the value of a decrease in filming rate are inputted to an arithmetic circuit 13 to obtain an integral discharging time when a film is formed on the disk and always monitor it; when the timing where the filming rate of the target 3 begins decrease is detected, the rotating speed of the rotary body 4 is obtained, the rotating speed of a motor 5 which drives the rotary body 4 so that the film thickness becomes constant is computed, and the value is supplied as a new rotating speed command value 9 for the motor 5.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PHYSICS
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title METHOD AND MECHANISM FOR SPUTTERING
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