PRODUCING METHOD FOR NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

PROBLEM TO BE SOLVED: To reduce the area of a memory array. SOLUTION: A producing method for a non-volatile semiconductor memory device is provided with plural memory cells composed of diffusion bit lines formed at least one part of the bottom surface and the side face of a trench formed on a wafer,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TANIGAMI TAKUJI, YOSHIMI MASANORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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