INSULATED GATE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To solve a problem in the conventional case wherein a gate oxide film in a channel region is thinned in a power MOSFET of a trench type so that a gate oxide film in a bottom part of a trench is also thinned, and large feedback capacitance is caused between a gate and a drain wh...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KUBO HIROTOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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