FORMATION METHOD FOR ALUMINUM OXIDE FILM AND MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT USING IT
PROBLEM TO BE SOLVED: To provide a method in which an aluminum oxide film is formed by a monoatomic vapor deposition method by using MTMA as an aluminum source substance. SOLUTION: The formation method comprises a first step in which a semiconductor substrate 102 is prepared and in which the semicon...
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| creator | KWAK HEUNG-SIK KIN BINSHU KIM KYONG-MIN LIM CHAN KIM CHUNG TAE |
| description | PROBLEM TO BE SOLVED: To provide a method in which an aluminum oxide film is formed by a monoatomic vapor deposition method by using MTMA as an aluminum source substance. SOLUTION: The formation method comprises a first step in which a semiconductor substrate 102 is prepared and in which the semiconductor substrate is mounted on a reactor 220. The method comprises a second step in which the MTMA 212 is supplied to the reactor as the aluminum source substance so as to be adsorbed onto the semiconductor substrate. The method comprises a third step in which nitrogen gas is made to flow into or vacuum-purged and in which unreacted MTMA or a reaction by-product is discharged via a first discharge pump. The method comprises a fourth step in which an oxygen source 216 is supplied to the reactor so as to be adsorbed onto the semiconductor substrate. The method comprises a fifth step in which nitrogen gas is made to flow into or vacuum-purged and in which an unreacted oxygen source substance or a reaction by-product is discharged via the first discharge pump. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2001244263A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2001244263A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2001244263A3</originalsourceid><addsrcrecordid>eNqNi7EKwkAQBdNYiPoPi70Qk2B_3O2ZleyexD2wC0HPSjQQ_x8jWFhaPWaYN8-uPrRslIIAo9bBwSTANJFJIkM4k0Pw1DAYccBGojdWY0uy_z2ckMkGcdHqRNggoyjE0ycjXWazW38f0-q7i2ztUW29ScOzS-PQX9IjvbrDscjzbVFVxa405V_RG8h_NQo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FORMATION METHOD FOR ALUMINUM OXIDE FILM AND MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT USING IT</title><source>esp@cenet</source><creator>KWAK HEUNG-SIK ; KIN BINSHU ; KIM KYONG-MIN ; LIM CHAN ; KIM CHUNG TAE</creator><creatorcontrib>KWAK HEUNG-SIK ; KIN BINSHU ; KIM KYONG-MIN ; LIM CHAN ; KIM CHUNG TAE</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method in which an aluminum oxide film is formed by a monoatomic vapor deposition method by using MTMA as an aluminum source substance. SOLUTION: The formation method comprises a first step in which a semiconductor substrate 102 is prepared and in which the semiconductor substrate is mounted on a reactor 220. The method comprises a second step in which the MTMA 212 is supplied to the reactor as the aluminum source substance so as to be adsorbed onto the semiconductor substrate. The method comprises a third step in which nitrogen gas is made to flow into or vacuum-purged and in which unreacted MTMA or a reaction by-product is discharged via a first discharge pump. The method comprises a fourth step in which an oxygen source 216 is supplied to the reactor so as to be adsorbed onto the semiconductor substrate. The method comprises a fifth step in which nitrogen gas is made to flow into or vacuum-purged and in which an unreacted oxygen source substance or a reaction by-product is discharged via the first discharge pump.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010907&DB=EPODOC&CC=JP&NR=2001244263A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010907&DB=EPODOC&CC=JP&NR=2001244263A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KWAK HEUNG-SIK</creatorcontrib><creatorcontrib>KIN BINSHU</creatorcontrib><creatorcontrib>KIM KYONG-MIN</creatorcontrib><creatorcontrib>LIM CHAN</creatorcontrib><creatorcontrib>KIM CHUNG TAE</creatorcontrib><title>FORMATION METHOD FOR ALUMINUM OXIDE FILM AND MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT USING IT</title><description>PROBLEM TO BE SOLVED: To provide a method in which an aluminum oxide film is formed by a monoatomic vapor deposition method by using MTMA as an aluminum source substance. SOLUTION: The formation method comprises a first step in which a semiconductor substrate 102 is prepared and in which the semiconductor substrate is mounted on a reactor 220. The method comprises a second step in which the MTMA 212 is supplied to the reactor as the aluminum source substance so as to be adsorbed onto the semiconductor substrate. The method comprises a third step in which nitrogen gas is made to flow into or vacuum-purged and in which unreacted MTMA or a reaction by-product is discharged via a first discharge pump. The method comprises a fourth step in which an oxygen source 216 is supplied to the reactor so as to be adsorbed onto the semiconductor substrate. The method comprises a fifth step in which nitrogen gas is made to flow into or vacuum-purged and in which an unreacted oxygen source substance or a reaction by-product is discharged via the first discharge pump.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKwkAQBdNYiPoPi70Qk2B_3O2ZleyexD2wC0HPSjQQ_x8jWFhaPWaYN8-uPrRslIIAo9bBwSTANJFJIkM4k0Pw1DAYccBGojdWY0uy_z2ckMkGcdHqRNggoyjE0ycjXWazW38f0-q7i2ztUW29ScOzS-PQX9IjvbrDscjzbVFVxa405V_RG8h_NQo</recordid><startdate>20010907</startdate><enddate>20010907</enddate><creator>KWAK HEUNG-SIK</creator><creator>KIN BINSHU</creator><creator>KIM KYONG-MIN</creator><creator>LIM CHAN</creator><creator>KIM CHUNG TAE</creator><scope>EVB</scope></search><sort><creationdate>20010907</creationdate><title>FORMATION METHOD FOR ALUMINUM OXIDE FILM AND MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT USING IT</title><author>KWAK HEUNG-SIK ; KIN BINSHU ; KIM KYONG-MIN ; LIM CHAN ; KIM CHUNG TAE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2001244263A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2001</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KWAK HEUNG-SIK</creatorcontrib><creatorcontrib>KIN BINSHU</creatorcontrib><creatorcontrib>KIM KYONG-MIN</creatorcontrib><creatorcontrib>LIM CHAN</creatorcontrib><creatorcontrib>KIM CHUNG TAE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KWAK HEUNG-SIK</au><au>KIN BINSHU</au><au>KIM KYONG-MIN</au><au>LIM CHAN</au><au>KIM CHUNG TAE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FORMATION METHOD FOR ALUMINUM OXIDE FILM AND MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT USING IT</title><date>2001-09-07</date><risdate>2001</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method in which an aluminum oxide film is formed by a monoatomic vapor deposition method by using MTMA as an aluminum source substance. SOLUTION: The formation method comprises a first step in which a semiconductor substrate 102 is prepared and in which the semiconductor substrate is mounted on a reactor 220. The method comprises a second step in which the MTMA 212 is supplied to the reactor as the aluminum source substance so as to be adsorbed onto the semiconductor substrate. The method comprises a third step in which nitrogen gas is made to flow into or vacuum-purged and in which unreacted MTMA or a reaction by-product is discharged via a first discharge pump. The method comprises a fourth step in which an oxygen source 216 is supplied to the reactor so as to be adsorbed onto the semiconductor substrate. The method comprises a fifth step in which nitrogen gas is made to flow into or vacuum-purged and in which an unreacted oxygen source substance or a reaction by-product is discharged via the first discharge pump.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | FORMATION METHOD FOR ALUMINUM OXIDE FILM AND MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT USING IT |
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